Asynchronous, High-bandwidth memory component using calibrated timing elements

ABSTRACT

Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device.

TECHNICAL FIELD

[0001] This invention relates to high-speed memory systems and devices,and in particular to high-speed memory devices that accommodatepipelined memory access operations.

BACKGROUND OF THE INVENTION

[0002]FIG. 1 shows an example of prior art asynchronous memory device10. Memory device 10 is an asynchronous DRAM (dynamic random accessmemory) having a memory array 12 that is addressable by the combinationof a row address and a column address. The row and column addresses aretypically provided during different bus cycles on a common address busADDR. A RAS signal indicates a bus cycle in which the row address issupplied, and the CAS signal indicates a bus cycle in which the columnaddress is supplied. Memory results are provided in response toindividual column addresses-in response to CAS bus cycles.

[0003] The memory device shown in FIG. 1 includes address registers 14and 15 that hold the row and column addresses during memory access. TheRAS and CAS signals, respectively, load the row and column addressesfrom the address bus into registers 14 and 15.

[0004] The CAS signal also loads a command or instruction (write orread) into a command register 16. A command decode block 17 interpretsthe current memory instruction and enables an appropriate driver 18 or19, depending on whether the memory operation is a write operation or aread operation.

[0005]FIG. 2 shows the CAS timing of a read operation in the memorydevice of FIG. 1. The rising edge of CAS loads the column address intoregister 15, loads the read command into register 16, and starts thecolumn access. Actual memory access requires a time t_(CAC) from theleading edge of the CAS signal. The assertion of CAS also turns on thedata output driver 18 after a delay of t_(ON). Initially, invalid data(cross-hatched) is driven on the DATA bus. Valid data is driven afterthe time t_(CAC) and until a time t_(OFF) after CAS is de-asserted.

[0006] This access is asynchronous since read data appears on the DATAbus after a time that is determined by the DRAM and not by timingsignals supplied externally (other than the initial CAS edge that loadsthe address). The advantage of this approach is simplicity—it isrelatively easy to use this memory device. The disadvantage isperformance—the number of read operations per unit of time is relativelylimited since accessing the memory array and transporting the resultingdata on the DATA bus must be done sequentially before the next accesscan begin.

[0007]FIG. 3 shows pertinent elements of a synchronous DRAM 20, a priorart device having an architecture that facilitates higher access speedsrelative to the asynchronous DRAM described above. DRAM 20 has one ormore banks of memory arrays 21. It has row and column address registers22 and 23 that receive row and column addresses from a common addressbus ADDR. DRAM 20 also has a command register 24 that receives andstores commands or instructions from a command or control bus OP. Thisdevice allows more complex memory access operations that the device ofFIG. 1, and therefore allows more commands through its OP bus.

[0008] Instead of RAS and CAS signals, this device uses a single CLKsignal, in conjunction with the OP bus, to load row and column addressesinto registers 22 and 23. The command register 24 is loaded by the CLKsignal as well.

[0009] Another difference from the circuit of FIG. 1 is that DRAM 20 hasregisters 25 and 26 in the path of the read and write data (between theDATA bus and the memory arrays 21). These registers are also loaded bythe CLK signal. A command decode block 27 generates signals that enabledrivers 28 and 29 for the read and write data.

[0010] The inclusion of two or more independent banks of memory arrayspermits more that one memory access to take place at a time. In otherwords, a second memory access operation can be initiated even beforeobtaining results of an earlier operation. Registers 25 and 26, in thepath of the read and write data, are necessary for this type ofoverlapped operation. Such overlapped operation is typically referred toas “pipelined” operation or “pipelined” memory access.

[0011]FIG. 4 shows the timing of a column read access for synchronousDRAM 20. On the first rising edge of CLK the column address is loadedfrom the ADDR bus into column address register 23, and a command isloaded from the OP bus into command register 24. Accessing theappropriate memory array and obtaining memory data requires a timet_(CAC), which is slightly less than the period of the clock signal CLK.At the next rising edge of CLK, the read data is loaded from the memoryarray into read data register 25. This CLK edge also turns on the dataoutput driver 28 after a delay of t_(ON). The third rising edge of CLKturns off the data output drivers after a time t_(OFF).

[0012] This operation is synchronous, in that data output is timed andenabled relative to an externally supplied clock signal. The row andcolumn address registers 22 and 23 form a first pipeline stage, in whichaddresses are obtained for accessing memory. The read data register 25forms a second pipeline stage, which is capable of holding memoryresults even as another memory access operation is initiated in thefirst pipeline stage. As a result of this technique, the two steps ofmemory access and data transport are done sequentially in the twopipeline stages of the DRAM. A second memory access could be startedafter the second CLK edge, overlapping the two operations.

[0013] There are two benefits to this technique. First, it permitssequential transactions to be overlapped, increasing the number of readtransactions per unit of time. Second, it resynchronizes the transportof the read data—the signals that enable and disable the drivers aretimed by the subsequent CLK edges.

[0014] As the signaling bandwidth of memory buses is increased, morepipeline stages can be added to the DRAM so that individual data slotsare very small. Modern memory designs utilize a high degree ofpipelining to support very high transfer rates.

[0015] Although pipelining has been essential to achieving high memoryaccess rates, the technology does have disadvantages. High latency isone disadvantage, resulting from the need to quantize internal delays tothe externally-supplied clock period. A disproportionally high powerrequirement is another disadvantage. Power is a concern because afree-running clock dissipates power even when no useful work is beingdone. Some devices utilize low-power modes in which the clock is gatedoff, but this creates further latency problems. Furthermore, the powerneeded while restarting the clock threatens to erase whatever savingsmight have otherwise been gained by disabling the clock.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016]FIG. 1 is a block diagram of a prior art asynchronous memorydevice.

[0017]FIG. 2 is a timing diagram illustrating operation of the device ofFIG. 1.

[0018]FIG. 3 is a block diagram of a prior art synchronous memorydevice.

[0019]FIG. 4 is a timing diagram illustrating operation of the device ofFIG. 3.

[0020]FIG. 5 is a block diagram of a high-speed bus system.

[0021]FIG. 6 is a block diagram of a first embodiment of anasynchronous, pipelined memory device.

[0022]FIG. 7 is a timing diagram illustrating operation of the device ofFIG. 6.

[0023]FIG. 8 is a block diagram of a second embodiment of anasynchronous, pipelined memory device.

[0024]FIG. 9 is a timing diagram illustrating operation of the device ofFIG. 8.

[0025]FIG. 10 is a block diagram of delay elements and calibration logicas used in the embodiments described herein.

[0026]FIG. 11 is a block diagram showing one configuration of delayelements for use in the embodiments described herein.

[0027]FIG. 12 is a block diagram showing another configuration of delayelements for use in the embodiments described herein.

[0028]FIG. 13 shows a memory delay block that can be configured afterdevice manufacture to change its delay.

[0029]FIG. 14 is a block diagram of a third embodiment of anasynchronous, pipelined memory device.

[0030]FIG. 15 is a block diagram showing address interfacing logic for afourth embodiment of an asynchronous, pipelined memory device.

[0031]FIG. 16 is a timing diagram illustrating operation of thecomponents shown in FIG. 15.

[0032]FIG. 17 is a block diagram showing data interfacing logic for thefourth embodiment of an asynchronous, pipelined memory device.

[0033]FIGS. 18 and 19 are a timing diagrams illustrating operation ofthe components shown in FIG. 17.

[0034]FIG. 20 is a block diagram showing a calibration circuit.

[0035]FIG. 21 is a timing diagram illustrating operation of thecomponents shown in FIG. 20.

[0036]FIG. 22 is block diagram of a compare and control block.

[0037]FIG. 23 is a timing diagram illustrating operation of thecomponents shown in FIG. 22.

[0038]FIG. 24 is a block diagram of a “D” cell delay element.

[0039]FIG. 25 is a block diagram of an “N*D” cell delay element.

[0040]FIG. 26 is a block diagram of a receiver block.

[0041]FIG. 27 is a timing diagram illustrating operation of thecomponents shown in FIG. 27.

[0042]FIG. 28 is a block diagram of timing logic.

[0043]FIG. 29 is a block diagram of a decode block.

[0044]FIG. 30 is a timing diagram illustrating operation of thecomponents shown in FIG. 29.

[0045]FIG. 31 is a block diagram of an EXP block.

[0046]FIG. 32 is a timing diagram illustrating operation of thecomponents shown in FIG. 31.

[0047]FIG. 33 is a block diagram of an REP2 block.

[0048]FIG. 34 is a timing diagram illustrating operation of thecomponents shown in FIG. 33.

[0049]FIG. 35 is a block diagram of an REP4 block.

[0050]FIG. 36 is a timing diagram illustrating operation of thecomponents shown in FIG. 35.

[0051]FIG. 37 is a block diagram of a fifth embodiment of anasynchronous pipelined memory device.

[0052]FIG. 38 is a block diagram illustrating timing logic of the deviceshown in FIG. 37.

DETAILED DESCRIPTION

[0053]FIG. 5 shows a high-speed bus system 30. The bus system includes anumber of discrete devices 31-33, which communicate over an electricalbus 36 at very high speeds. Specifically, signals driven by devices31-33 on bus 36 have durations that are shorter than the propagationdelay of the bus. This type of environment is referred to as a“wavepipelined” environment, because more than one signal can be intransit on a bus line at any given time.

[0054] The described system includes a master device 31, such as amemory controller, and a plurality of slave devices 32-33, which mightcomprise memory devices. The master device 31 initiates and controlsdata exchanges over bus 36. It is located at one end of the bus,referred to herein as the master end of the bus. Slave devices 32-33 arespaced along the remaining portions of the bus, toward its other end.

[0055] The bus can be configured in a variety of different ways. Forexample, bus 36 might include a shared address bus that is used for bothrow and column addresses. Alternatively, bus 36 might include individualbuses, dedicated respectively to row and column addresses. Bus 36 alsoincludes a data bus, which might be dedicated to only data or might beshared between data and address information. Furthermore, the data busmight be uni-directional or bi-directional. Bus 36 further includes acommand bus, which again might be dedicated or shared.

[0056] The bus includes one or more input load signal lines 37 thatcarry input load signals. An input load signal is issued by masterdevice 31 and received by slave devices 32-33 to initiate data accesscycles such as memory read and write cycles in slave devices 32-33. Aswill be described in more detail below, the slave devices are responsiveto the input load signal to load data at predetermined, asynchronoustimes following the input load signal. In the case of a read cycle, theslave devices load data from internal storage and present or enable suchdata on bus 36. In the case of a write cycle, the slave devices loaddata from bus 36.

[0057] First Embodiment

[0058]FIG. 6 shows pertinent components of an asynchronous high-speedmemory device 50 which might be used in a system such as that shown inFIG. 5, or in other types of memory systems. The architecture shown inFIG. 6 allows asynchronous data transfer while still allowing datapipelining.

[0059] This example is a DRAM, but the concepts described herein areapplicable to various different kinds of volatile, non-volatile, randomaccess, and read-only memory, including SRAM (static random accessmemory); flash memory; mask-programmable memory; field-programmablememory; electrically-erasable, programmable, memory; ferro-electricmemory; magneto-resistive memory, etc.

[0060] Furthermore, while certain aspects of the described circuitsutilize asynchronously generated signals, it is contemplated that thedescribed asynchronous techniques might be employed in circuits thatalso utilize or receive periodic clock signals for certain purposes.

[0061] DRAM 50 comprises a plurality of memory arrays or banks 52, eachhaving a plurality of memory cells, which will be referred tocollectively as the memory core. This type of memory is addressable bybank, column, and row. Typically, the bank address is incorporated inthe row address as the highest several bits. The banks are capable ofbeing independently accessed.

[0062] Memory such as this is typically accessed by providing a rowaddress, sensing all the columns of the specified row, and thenaccessing one or more memory columns of the sensed memory row. Columndata is available only after a minimum sense time, measured from theprevious sensing operation.

[0063] DRAM 50 has one or more address registers 54 and 55 thatcorrespond to row and column addresses, respectively. An input loadsignal LD, also referred to as an address load signal, is received froman external source such as a memory controller, and is used to load therow and column address registers 54 and 55 from a common address busADDR. In addition DRAM 50 has one or more command registers 56 that loadreceived command information from a command bus OP at a time indicatedby the received LD signal. Command decoding logic 58 responds to thevalue loaded in command register 56 to gate signals appropriately withinthe device.

[0064] Data is received from a data bus, labeled DATA in FIG. 6, duringwrite cycles. Data is provided to the DATA bus during read cycles.

[0065] Appropriate buffers 60 are provided for incoming signals.

[0066] The memory device includes a read data register 62 that ispositioned to receive and latch data from core memory 52 during a memoryread cycle. The output of read data register 62 passes through a readoutput driver 63 on its way to the DATA bus.

[0067] The memory device also includes a write data register 64 thatreceives data from the DATA bus and provides it to core memory 52. Awrite driver 65 is positioned between write data register 64 and thecore memory 52.

[0068] Read data register 62 loads memory data from memory cells of corememory 52 at a time indicated by a data register load and enable signalLOAD/ENABLE. More specifically, both read data register 62 and readdriver 63 are enabled in common by the LOAD/ENABLE signal. In responseto this signal, read data register 62 latches any data being provided bycore memory 52, and read driver 63 turns its outputs on to present readdata on the DATA bus..

[0069] Write data register 64 similarly loads memory data at a timeindicated by its received data register load and enable signalLOAD/ENABLE. Specifically, both write data register 64 and write driver65 are enabled in common by the corresponding LOAD/ENABLE signal. Inresponse to this signal, write data register 64 latches any data beingprovided from the DATA bus, and write driver 65 turns its outputs on.During a subsequent, independent operation, the data provided from dataregister 64 is loaded into memory cells of core memory 52.

[0070] The LOAD/ENABLE timing signals are created by respectiveasynchronous delay elements 70 and 71. Each of these elementsasynchronously generates its LOAD/ENABLE signal at a predetermined timeafter receiving the load signal LD. More specifically, command decodinglogic 58 is configured so that delay element 70, which is associatedwith a read operation, receives the LD signal when it is received inconjunction with a column read command from the OP command bus. Delayelement 70 responds by delaying the LD signal to create a LOAD/ENABLEsignal which is supplied to read data register 62. Delay element 71,which is associated with a write operation, receives the LD signal whenit is received with a column write command from the OP command bus. Itresponds by delaying the LD signal to create a LOAD/ENABLE signal whichis supplied to write data register 64.

[0071] Delay element 70 is responsive to its input signal to delay itsinput signal by a predetermined amount t_(CAC). This time correspondsapproximately to the time required from specifying a column address tothe time at which the corresponding data is available from core memory52. Delay element 71 is responsive to its input signal to delay itsinput signal by a predetermined amount t_(CWR). This time correspondsapproximately to the time required from specifying a column address tothe time at which the corresponding write data loaded into register 64and presented to the memory core 52.

[0072]FIG. 7 shows timing details for a read cycle in the device of FIG.6. The input load signal LD initiates the memory access cycle. Note,however, that this signal is not a periodic clock signal as in the priorart. Rather, only a single transition is utilized for any single memoryoperation. Subsequent actions within the memory device, includingpipeline operations, are performed at asynchronously-timed intervalsfollowing the LD signal, without reference to an externally suppliedclock signal.

[0073] At the rising edge of the LD signal, a received column address isloaded from address bus ADDR into column address register 55 and a readcommand is loaded from command bus OP into command register 56. The LDsignal is passed through command decoding logic 58 and initiates atiming interval within delay element 70. After a time t_(CAC), the delayelement produces the LOAD/ENABLE signal, which both loads memory datafrom core memory 52 into read data register 62, and also enables outputdriver 63 (after a delay t_(ON) caused by the latency of driver 63). TheLOAD/ENABLE signal remains active for a time t_(BIT), and then turns offdriver 63 (after a delay t_(OFF), again caused by the latency of driver63). Write cycles occur with similar timing, except that data is latchedfrom the DATA bus rather than from core memory 52.

[0074] This configuration allows the two memory operation steps, accessand transport, to be performed sequentially, in a pipelined fashion. Ina first stage, address and command data are loaded into first stageregisters 55 and 56, and memory access is initiated. In a second stage,accessed memory data is loaded into second stage output register 62 anddriven on the DATA bus for transport. A second access cycle can beinitiated during the transport stage by reasserting the input loadsignal LD prior to completion of the first access cycle—after a timet_(CAC) from the initial LD signal.

[0075] Using this architecture, pipelining is controlled withasynchronous delay elements rather than with synchronous clocking. Thereare two benefits to this approach. First, the delay of each pipelinestage can be adjusted differently, rather than forcing all of the delaysto match an arbitrary clock period. This also reduces latency,especially in cases where the memory controller might operate at a clockcycle time that is not well matched to the pipeline stage delays of thememory.

[0076] Power reduction is a second benefit. A prior art synchronous DRAMuses registers to perform two functions: delay and information storage.Furthermore, as a single transaction passes through a synchronous DRAM,all registers must be continuously clocked. The memory device of FIG. 6,on the other hand, uses registers only for information storage. Also, asingle transaction passing through this device creates only the controledges needed for that transaction.

[0077] Furthermore, as the signaling bandwidth of memory buses isincreased, the clock recovery logic (delay-locked loops and phase-lockedloops) that are needed for synchronous DRAMs can require circuits thatare continuously on and that require a long time interval to reach theiroperating point. This can result in a significant power level even whenno memory accesses are being performed. Turning off these circuits canresult in significant added latency when an access must be started.

[0078] Second Embodiment With Additional Pipeline Element

[0079]FIG. 8 shows a different embodiment of a memory device, referencedby numeral 80. For the most part, this embodiment is identical to thatof FIG. 5, and identical reference numerals have therefore been used toindicate identical elements. The difference in this embodiment is anadditional stage of pipelining, relating to column addressing.Specifically, an additional address pipeline register 81 has been addedbetween column address register 55 and memory core 52. This register isloaded by its own LOAD signal, which is derived or created by delayingthe input load signal LD. Specifically, a delay element 82 receives theLD signal during operations involving column addresses, and delays theLD signal by an appropriate, predetermined amount.

[0080]FIG. 9 shows timing for a read cycle in the embodiment of FIG. 8.The input load signal LD initiates the memory access cycle. Again, thissignal is not a periodic clock but a single transition. Subsequentactions within the memory device are triggered asynchronously by theLOAD and LOAD/ENABLE signals, which are generated by asynchronous delayelements within the memory device.

[0081] At the rising edge of the LD signal, column address is loadedfrom address bus ADDR into column address register 55 and a read commandis loaded from command bus OP into command register 56. The LD signal ispassed through command decoding logic 58 and initiates a timing intervalwithin delay element 82. After a time t₁, the delay element produces theLOAD signal, which loads address pipeline register 81 with the columnaddress from address register 55. After another delay, t₂, produced bydelay element 70, the LOAD/ENABLE signal becomes active, which loadsmemory data from core memory 52 into read data register 62 and enablesoutput driver 63. Note that the LOAD/ENABLE signal in this embodimentmay be created either by delaying LOAD by t₁, or by delaying LD byt₁+t₂.

[0082] Note that the LD signal, which loads addresses and initiatesmemory access cycles, might take forms other than the simplesingle-conductor voltage transition shown in the disclosed embodiments.For example, the LD signal might be derived from a combination of two ormore other signals that have been logically gated to decode memoryaccess events.

[0083] The advantage of this embodiment is the presence of theadditional pipeline stage, which allows a higher degree of overlappedoperations. In this embodiment, a subsequent memory operation can beinitiated sooner than in the embodiment of FIG. 6—at time t₁, when theLOAD signal transitions. If desired, additional address pipeline stagescan be utilized to provide even higher bus utilization.

[0084] This embodiment, and the more complex embodiments that follow,demonstrate the general concept of a memory device having a plurality orsequence of pipeline registers or elements that are asynchronouslysignaled and loaded, in a predetermined sequence, to complete memoryaccess cycles. In the embodiment of FIG. 6, such pipeline elementsrelate to both addresses and data, including address registers 54 and55, command register 56, read data register 62, and write data register64. In the embodiment of FIG. 8, the pipeline elements include anadditional address pipeline register 81.

[0085] In the prior art, pipeline elements are generally signaled orstrobed by a periodic clock signal, with the disadvantages that havealready been noted. In the embodiments described herein, however, amemory cycle is initiated with a single input load signal. Timing logic,including a plurality of delay elements, is responsive to the input loadsignal to produce a corresponding sequence of asynchronously timedregister load signals. This sequence of load signals is utilized to loadthe various pipeline elements in the proper sequence, with the propertiming.

[0086] Delay Elements

[0087] The various load signals to the pipeline elements are produced bycorresponding delay elements. In the described embodiments, a pluralityof delay elements are designed within a single integrated circuit tohave matching delays, and individual delay elements are grouped oraggregated to produce delays of different lengths. For example,individual delay elements might be designed to have a delay t_(d).Multiples of t_(d) are then obtained by chaining a plurality ofindividual delay elements.

[0088] For high-speed operations, it is desirable to calibrate theindividual delay elements as precisely as possible. Such calibrationallows external devices, such as memory controllers, to communicate insynchronization with the advance of data through the pipeline elementsof the memory device.

[0089]FIG. 10 shows a plurality of matching delay elements 90 such asare preferably used in the embodiments of FIGS. 6 and 8. Each delayelement receives an input signal 91 and in response produces an outputsignal 92. The output signal is similar or identical to the inputsignal, except that the output signal is delayed by a time t_(d). Eachdelay element is identically constructed within the integrated circuit,so that each delay element will produce a nearly identical delay t_(d).

[0090] The time t_(d) is preferably changeable in response to a delayvalue that is either generated internally to the memory device orreceived from a source external to the memory device. More specifically,each delay element 90 is responsive to a delay adjustment signal 93.This common signal is provided to all of the matching delay elements. Asa result, the delay elements are collectively adjustable, to produceindividual matching delays. Such delays are asynchronous—in thedescribed embodiments, the delays are not necessarily aligned to anyreceived clock signal.

[0091] The memory device includes delay setting logic 94 that sets andcalibrates the delays of the delay elements. Delay setting logic 94receives a signal 95 that indicates a delay value. In response to thesupplied delay value, delay setting logic 94 sets its delay adjustmentoutput 93 to an appropriate value or level, so that each of the delayelements 90 provides the desired signal delay between its input and itsoutput.

[0092] Delay setting logic 94 preferably uses a feedback loop tocalibrate its delay adjustment output, and to in turn calibrate thedelay elements 90. Specifically, one of the delay elements 90 a isdedicated for use as a calibration element. Delay setting logic 94generates a signal at the input of calibration delay element 90 a, andmonitors the resulting output from element 90 a to determine the actualdelay resulting from the delay adjustment value 93. Based on thisdetermination of the actual delay, delay setting logic 94 varies itsdelay adjustment output signal 93 until the desired delay value t_(d) isobtained through element 90 a. Because the delay elements are allsimilar in design and implementation, calibrating one of the delayelements ensures that all of them are similarly calibrated.

[0093] The delay value 95 can be generated by an internal source such asa capacitive circuit or other type of circuit that is capable ofgenerating a precise reference interval. More desirably, the delay valueis generated externally to the memory device, so that the internaldelays of the memory device can be synchronized with operations of anexternal device such as a memory controller.

[0094] The delay value 95 can be supplied to delay setting logic 94 invarious forms, but is preferably supplied as a pair of signals or timingevents that are separated in time by the actual desired delay. Forexample, the delay value can be specified as the time between twovoltage edges on a single input conductor, or as the time between twosignal edges on a pair of conductors. Alternatively, the delay valuemight be specified as two relatively timed events on an input conductorthat is normally used for some other purpose, such as a conductor thatis normally part of the address, data, or command bus, or a conductorthat normally carries the input load signal. The delay value might alsobe encoded on one or more conductors such as the conductors thatnormally form part of the address, data, or command bus.

[0095] A calibration process, which utilizes the feedback of delayelement 90 a, is preferably performed at regular intervals, to accountfor variations in temperature and voltage of the memory device. Whentiming events are supplied by an external source, it is desirable toprovide such events on a periodically repeating basis for periodicrecalibration. As will become more apparent in the more detaileddiscussion below, it is desirable to provide periodic bursts of suchtiming events for recalibration purposes. Such bursts can be providedconcurrently with memory access cycles. However, it is not necessary forthe timing signals to a accompany individual memory cycles. Furthermore,the timing signals can be asynchronous to other signals used within thememory device.

[0096]FIG. 11 shows a configuration of delay elements for use in amemory device having three pipeline stages. In this example, eachsuccessive stage is loaded at a successive delay from the cycleinitiation signal LD. A first delay block 96 has a single one of delayelements 90 to produce a first delayed load signal to load the firststage of the pipeline. A second delay block 97 contains a pair ofserially connected delay elements 90 to produce a second delayed loadsignal to load the second stage elements of the pipeline. A third delayblock 98 contains three serially connected delay elements 90 to producea third delayed load signal to load the third pipeline stage. Althoughnot shown, each of the delay elements 90 is connected to be calibratedby a delay adjustment signal 93, as shown in FIG. 10.

[0097]FIG. 12 shows an alternative configuration of delay elements,again for use in a memory device having three pipeline stages. In thiscase, each successive pipeline load signal is derived from the previousone. This configuration includes three delay blocks 100, 101, and 102,which produce load signals corresponding respectively to the threedevice pipeline stages. The first delay block 100 is responsive to thecycle initiation signal LD. The second delay block 101 is responsive tothe output of the first delay block 100. The third delay block 102 isresponsive to the output of the second delay block 101.

[0098] In certain situations, it may be desirable to be able toconfigure, after device manufacture, the timing within a pipelineddevice such as described above to vary the time at which data is loadedwithin various pipeline stages. In the embodiment of FIG. 6, forexample, it might be desirable to configure the predetermined timet_(CAC) from the LD signal to the LOAD/ENABLE signal. This might beimportant to ensure that read data returns to a memory controller aftera fixed delay from when the read address is first transmitted,regardless of how far the memory component is located from thecontroller. If, for example, there were two ranks of memory devicespresent on the memory bus, the closer rank would be programmed withenough extra delay to compensate for the longer round trip flight timeto the further rank. When a controller issued a read address to eitherrank, the read data would appear at the same absolute time at thecontroller pins.

[0099]FIG. 13 shows a memory delay block 104 that can be configuredafter device manufacture to change its delay. This delay block containsthree delay elements 90 connected in series. In addition, fusible links105 connect the output of each delay element 90 to a block output 106.Prior to use, two of fusible links 105 are broken using conventionaltechniques such as by applying voltage to appropriate points of thememory device. Depending on which of the links are broken, a fixed delayof either t_(d), 2t_(d), or 3t_(d) can be selected as a block delay.

[0100] A delay block such as the one shown in FIG. 13 can be used atvarious places in a an asynchronous pipeline design, to provide anydesired configurability in the delays employed between pipeline stages.Note that mechanisms other than fusible links might be used to providesuch selectivity, such as multiplexers, control registers, non-volatilememory, etc. The embodiment described below with reference to FIGS.15-38, for example, uses a multiplexer to provide programmable delaysbetween pipeline stages.

[0101] Third Embodiment With Received Data Register Load

[0102]FIG. 14 shows yet another embodiment of an asynchronous memorydevice, referenced by numeral 110. For the most part, this embodiment isidentical to that of FIG. 6, and identical reference numerals havetherefore been used to indicate identical elements. The difference inthe embodiment of FIG. 14 is that the delay elements have been omitted.Instead, DRAM 80 accepts two externally-supplied input load signals: LD1and LD2. First input load signal LD1 is the same as the single LD signalof FIG. 5: it loads addresses into address registers 54 and 55, andloads a command into register 56.

[0103] Second input load signal LD2, also referred to herein as a dataregister load signal, is used in place of the delay element outputs. Thememory controller, which generates LD2, has its own timing elements thatdelay LD2 relative to LD1. During a read cycle, LD2 is gated to form aLOAD/ENABLE signal that loads read data register 62. Output driver 63 isresponsive to this LOAD/ENABLE signal to present read data on the DATAbus. During a write cycle, LD2 is gated to form a LOAD/ENABLE signalthat loads write data register 64 and enables driver 65. Timing detailsare similar to what is shown in FIG. 7.

[0104] Fourth Embodiment

[0105] FIGS. 15-38 show pertinent details of a further embodiment of ahigh-speed, asynchronous, pipelined memory device. This device isdesigned for a high-speed bus environment in which signals are driven onbus lines for durations that are shorter than the propagation delays ofthe bus lines themselves. Such systems are referred to as“wave-pipelined” systems, because more than one data signal can be inpropagation on a signal line at any given time. As in the embodimentsalready discussed, this embodiment allows a form of address and datapipelining in which data and address transfers within the device,including reads and writes of memory cells, are timed asynchronouslyfollowing a received memory access initiation signal such as an inputload signal.

[0106] Address Interfacing Logic

[0107]FIG. 15 shows details of address interfacing logic for anasynchronous, high-bandwidth DRAM using calibrated timing elements.Memory core is shown on the right, referenced by numeral 220.

[0108] On the left side of the FIG. 15 are interface signals thatconnect to external components. These signals include:

[0109] TREF1 is a time reference signal. The interval between successiverising edges of this signal defines a time interval which is used by acalibration circuit 222 to calibrate delay elements within the memorydevice. The delay elements, in turn, are used to create precise timingintervals for pipeline control signals. The calibration circuit 222,also referred to as a timing and voltage reference generator GEN,generates reference voltages V_(REFP), V_(REFN), and V_(REF8), which areused to adjust the delays of the delay elements. Calibration circuit 222will be described in more detail with reference to FIGS. 20-23.

[0110] ADDR[13:0] is a 14 bit address bus input that receives bank, row,and column addresses.

[0111] OP[3:0] is a four-bit command bus. It specifies a memory accessoperation such as a read or write operation.

[0112] LD is an input load signal. Its rising edge causes the OP bus tobe loaded into a command register 224, and causes the ADDR input bus tobe loaded into address register 226. Its rising edge also generatespulses on control signals to perform memory access operations.

[0113] The LD, OP, and ADDR signals are received by input receiverblocks and buffers, labeled RB and RD. These blocks provide signalbuffering and also impose uniform calibrated delays on the signals toensure that the signals maintain their initial time relationships toeach other. There are two versions: RB and RD. The RB is used forsignals which need to drive relatively large loads. The RD is used forsignals which need to drive relatively small loads. The specific designof the RB and RD blocks is discussed with reference to FIGS. 26 and 27.

[0114] The command bus supports the following operations in thissimplified example: OP[3] OP[2] OP[1] OP[0] Command 0 0 0 0 reserved 0 00 1 activate (ACT) 0 0 1 0 reserved 0 0 1 1 reserved 0 1 0 0 read (RD) 01 0 1 write (WR) 0 1 1 0 read and automatic pre-charge (RDA) 0 1 1 1write and automatic pre-charge (WRA) 1 x x x no operation

[0115] An actual DRAM product would include a richer set of operations.However, the set shown above is sufficient to demonstrate animplementation of the basic transactions for the asynchronous DRAMinterface.

[0116] The ACT command accesses a row in the DRAM core 220, sensing itand storing it in the sense amplifier latches. The RD and RDA commandsread a column of information (32 bits in this example design) from thesensed row. The WR and WRA commands write a column of information (32bits) into the sensed row. The RDA and WRA commands also cause theaccessed row to be pre-charged at the end of the column operation.

[0117] ADDR receives bank and row addresses for the ACT command, or bankand column addresses for the read and write commands. This designexample includes two bits (ADDR[13:12]) for selecting one of fourindependent memory core banks. The ADDR[11:0] bits contain the rowaddress or the column address, depending on the type of memoryoperation.

[0118] This example includes a sequence of address registers thatreceive addresses and that advance the addresses through the addressregisters in response to generated sequences of asynchronously timedregister load signals. The memory core is responsive to the addressesafter they have advanced through this sequence of address registers.

[0119] A first stage of address pipelining is supported by addressregister 226, which loads ADDR on the rising edge of LD1. Subsequentpipeline registers 227 and 228 receive successively delayed versions ofcolumn addresses (CLD1 and CLD2), and a final stage is supported inmemory core 220 by an address register 230, which is loaded by anotherdelayed version of the LD1 signal (COLLAT).

[0120] Row addresses and column addresses are handled differently. A rowaddress is received along with the LD signal, and initially loaded bythe LD1 signal in the first address pipeline register 226. A SENSEsignal is generated by delay elements in response to the LD1 signal, ata predetermined time following the LD1 signal (see detailed timingbelow). The row address is received from first stage address register226 by a memory core register 232, where the row address is loaded bythe SENSE signal. Bank addresses for an automatic precharge operation(from a RDA or WRA command) are received from third stage addressregister 228 and are loaded into a bank address register 234 by yetanother delayed version of LD1 (PLD). From there, the prechargeoperation's bank address is loaded by another delayed version of LD1(PRECH) into the core's bank select register 236.

[0121] The described pipelined memory device includes memory timing oraccess logic 202 that is responsive to the input load signal LD1 and tothe supplied 4-bit operation code to generate the delayed versions ofLD1 mentioned above, and to thereby control the flow of informationthrough the various pipeline registers shown in FIG. 15. Statedgenerally, timing logic 202 contains a plurality of delay elements thatproduce corresponding timing signals in response to the LD1 signal.These timing signals, and others that are used in a data interface to bedescribed below, are responsible for the precise timing of the differentoperations. They use calibration logic to insure that the asynchronoustiming of the different intervals is accurate enough to support veryhigh transfer bandwidths. These signals take the place of a clock in aconventional synchronous DRAM.

[0122] Specifically, timing logic 202 generates the following signals:

[0123] PRECH is a load signal. Its rising edge causes the PBSEL[13:12]bus to be loaded into a register 236. Its rising edge also initiates apre-charge operation in core 220.

[0124] PBSEL[13:12] contains the bank address for a pre-charge operationthat is scheduled after a column access.

[0125] SENSE is a load signal. Its rising edge causes the RADDR[13:0]bus to be loaded into a register 232. Its rising edge also initiates anactivate operation in core 220.

[0126] RADDR[13:0] contains the bank address and row address for anactivate operation.

[0127] COLLAT is a load signal. Its rising edge causes the CADDR[13:0]bus to be loaded into a register 230. Its rising edge also initiates acolumn access operation in core 220.

[0128] CADDR[13:0] contains the bank and column address for a columnaccess.

[0129] PLD, CLD1, and CLD2 are load signal that are used in conjunctionwith pipeline address registers 234, 227, and 228 to load successivelydelayed versions of the address bus ADDR.

[0130] The remaining signals, COLCYC, WR, WLD, QEN, QLD, and QMX areused in the data interface portion of the memory device, and will bedescribed below with reference to FIG. 17.

[0131] Registers 224, 226, 227, 228, and 234 each include a buffer fordriving the load presented by the internal logic and wiring. The delayof these registers and buffers are masked by longer delays of controlsignals, so no timing calibration logic is used here.

[0132] The following table sets for exemplary timing parameters for thedevice of FIGS. 15-38. These are nominal values, listed so that thesequencing of memory operations will be clear, and are not intended tobe limiting in any sense-actual values will be dependent upon theimplementation details of the particular memory device. The descriptionsin some cases refer to a “D” cell. A “D” cell is a delay element havinga standard, calibrated delay of t_(D). Most delays within the memorydevice are multiples of t_(D), and are created by chaining a pluralityof “D” cells. Parameter Value Description t_(RC) 60 ns Minimum time forsuccessive activate operations to the same bank t_(RR) 20 ns Minimumtime for successive activate operations to different banks t_(RP) 15 nsMinimum time between activate and pre-charge operations to the same bankt_(CC) 10 ns Minimum time for successive column operations to a bankt_(OP) 5 ns Minimum time for successive commands on the OP bus t_(BIT)2.5 ns Minimum time to transport a bit on the DQ, DM, DQS pins t_(Q) 2ns Maximum time from load signal to output data valid for a registert_(S) 1 ns Minimum time for a register input to be valid prior to a loadsignal for a register t_(H) 1 ns Minimum time for a register input to bevalid after a load signal for a register t_(WROFF) 5 ns Maximum interval(either direction) between the rising edges of LD and DQS for WR t_(CSH)20 ns Minimum interval between rising edges of SENSE and COLLAT t_(CLS)5 ns Minimum interval between rising edges of COLLAT and COLCYC t_(RCD)25 ns Minimum interval between rising edges of SENSE and COLCYC t_(DAC)7.5 ns Maximum interval from rising edge of COLCYC to valid read datat_(DOH) 2.5 ns Minimum interval from rising edge of COLCYC to valid readdata t_(CPS) 20 ns Minimum interval between falling edge of COLCYC andrising edge of PRECH t_(d) 0.25 ns Nominal delay of inverter pair in “d”cell (adjustable) t_(D) 1.25 ns Nominal delay of four inverter pairs andbuffer in “D” cell (adjustable) t_(X) 1.25 ns Nominal delay of “N_(X)”copies of the “D” cell: t_(X) = * X N_(X) * t_(D) t_(REF and) 10 nsNominal delay of “N_(REF)” copies of the “D” cell: t_(REF1) t_(REF) =N_(REF) * t_(D) and N_(REF) = 8 t_(TOT) 2.50 ns Nominal delay of“N_(TOT)” copies of the “D” cell: t_(TOT) = N_(TOT) * t_(D) and N_(TOT)= 2 t_(DEC) 1.25 ns Nominal delay of “N_(DEC)” copies of the “D” cell:t_(DEC) = N_(DEC) * t_(D) and N_(DEC) = 1 t_(LIM) 1.25 ns Nominal delayof “N_(LIM)” copies of the “D” cell: t_(LIM) = N_(LIM) * t_(D) andN_(LIM) = 1 t_(EXP) 5.00 ns Nominal delay of “N_(LIM)” copies of the “D”cell: t_(EXP) = N_(EXP) * t_(D) and N_(EXP) = 4 t_(EXP2) 6.25 ns Nominaldelay of “N_(EXP2)” copies of the “D” cell: t_(EXP2) = N_(EXP2) * t_(D)and N_(EXP2) = 5 t_(REP2) 5.00 ns Nominal delay of “N_(REP2)” copies ofthe “D” cell: t_(REP2) = N_(REP2) * t_(D) and N_(REP2) = 4 t_(REP4) 2.50ns Nominal delay of “N_(REP4)” copies of the “D” cell: t_(REP4) =N_(REP4) * t_(D) and N_(REP4) = 2

[0133]FIG. 16 shows the timing of the signals shown in FIG. 15. The LD1signal dictates the pace of activities in the asynchronous DRAM,somewhat like the clock signal of a synchronous DRAM. Various loadsignals are simply delayed versions of LD1. Thus, unlike a clock, onlyone edge of the LD1 signal is needed or used to initiate the requestedoperation; all subsequent edges that are needed for the operation aregenerated from the single LD1 edge. In a synchronous DRAM, more than oneclock edge is applied to move the operation from one pipeline stage tothe next.

[0134] A synchronous controller will probably generate the LD1 signal(and the other input signals). As a result, they will probably have anunderlying regularity, and this is shown in FIG. 16. However, theasynchronous interface would work just as well if the LD1 edges wereissued in an irregular fashion, provided that the minimum values oftiming parameters for the memory core and interface were met.

[0135] A first LD1 edge 270, in conjunction with an ACT command on theOP1 bus, initiates an activate operation. Along with the ACT command, abank and row address Rx is presented on the ADDR1 bus. The rising edge270 of LD1 loads the bank and row address into first-stage addressregister 226 and loads the ACT command into command register 224. TheLD1 edge is delayed a time 2*t_(TOT), and then causes an edge on theSENSE signal. This loads the Rx address into core register 232 andstarts the activate operation. No further activity occurs in theinterface for this operation.

[0136] In this figure and subsequent figures, delays caused by delayelements are indicated by dashed lines from the event initiating thedelay to the event resulting from the delay. In FIG. 16, for example, adashed line is shown from the leading edge 270 of LD1 to the leadingedge of the SENSE signal. This indicates that the SENSE signal isgenerated at a predetermined, asynchronous time after the leading edgeof LD1. The time is indicated alongside the dashed line, in this case2*t_(TOT). Except where noted, these delays are implemented withcollectively calibrated delay elements such as discussed with referenceto FIGS. 10-13, and such as will be discussed in more detail below withreference to FIGS. 24 and 25.

[0137] A second LD1 edge 272 (received from the memory controller), inconjunction with an OP (RD or WR) command on the OPI bus, initiates acolumn access operation. It is presented at a time top after the firstLD1 edge. Along with the OP command, a bank and column address Cxa ispresented on the ADDR1 bus. The second LD1 edge is delayed a time2*t_(TOT), and then causes an edge on the CLD1 signal. This loads theCxa address into second-stage pipeline register 227. The CLD1 edge isdelayed an additional time t₈, and then causes an edge on the CLD2signal. This moves the Cxa from the pipeline register 227 into thethird-stage pipeline register 228. The CLD2 edge is delayed anadditional time t₄, and then causes an edge on the COLLAT signal. Thismoves the Cxa from pipeline register 228 into the fourth-stage register230 in the DRAM core. The COLLAT edge is delayed an additional time t₄,and then causes an edge on the COLCYC signal. This signal controls datatransport to and from the DRAM core, and will be discussed further withreference to FIG. 17.

[0138] A third LD1 edge 277, in conjunction with an OP (RD or WR)command on the OP1 bus, initiates a second column access operation. Thisleading edge is presented a time t_(CC) after the second LD1 edge 272.Again, a bank and column address Cxb is presented on the ADDR1 bus. Thethird LD1 edge 277 is delayed a time 2*t_(TOT), and then causes an edgeon the CLD1 signal. This loads the Cxa address into second-stagepipeline register 227. The CLD1 edge is delayed an additional time t₈,and then causes an edge on the CLD2 signal. This moves the Cxa from thepipeline register 227 into the third-stage pipeline register 228. TheCLD2 edge is delayed an additional time t₄, and then causes an edge onthe COLLAT signal. This moves the Cxa from pipeline register 228 intothe fourth-stage register 230 in the DRAM core. The COLLAT edge isdelayed an additional time t₄, and then causes an edge on the COLCYCsignal. This signal controls data transport to and from the DRAM core,and will be discussed further with reference to FIG. 17.

[0139] Note that other transactions could be presented to the DRAM whilethis first transaction is being processed. On the fourth and fifth LD1edges 282 and 283, for example, ACT commands are directed to other banksin the DRAM. In this embodiment, these commands must be given a timet_(RR) or more after the first ACT command. An ACT command directed tothe first bank must be given a time t_(RC) or more after the first ACTcommand.

[0140] Note also that there are several timing constraints imposed uponthe timing of the COLLAT and COLCYC signals by the DRAM core. Inparticular, they must be issued a time t_(CSH) and a time t_(RCD),respectively, after the SENSE signal.

[0141] Data Interfacing Logic

[0142]FIG. 17 shows details of data interfacing logic for theasynchronous, high-bandwidth DRAM shown in FIG. 15. Memory core is shownon the right, referenced by numeral 220.

[0143] The data interfacing logic includes a write demultiplexer 240(also referred to herein as demultiplexing logic) and a read multiplexer242 (also referred to herein as multiplexing logic).

[0144] The write demultiplexer 240 accepts a sequence of four eight-bitwords from DQ[7:0] and assembles them into a single 32-bit word (WD1 andWD) for writing to memory core 220. The assembled 32-bit word WD1 isloaded into an intermediate pipeline register 244, and then loaded intothe appropriate memory core register 246 a subsequent, independentmemory operation (see FIG. 19).

[0145] The read demultiplexer 242 reads a 32-bit word RD[3:0][7:0] fromthe DRAM core read register 247 and splits it into four sequentialeight-bit words for output from the memory device on DQ[7:0].

[0146] On the left side of FIG. 17 are the signals that connect toexternal components. These signals include:

[0147] DQS is a data strobe signal. The rising and falling edges of thissignal provide timing marks to indicate when valid read or write data ispresent. During a read operation, this signal is composed in a mannersimilar to other read data. During a write operation, the DQS signal isused to load sequentially received bits—to assemble the data intoregisters in a “strobe domain” before passing it to the DRAM core.

[0148] DQ[7:0] is a data bus. It carries read and write data. Note thatthe core reads or writes a parallel 32-bit quantity in each columnaccess (in this example implementation), and the interface transportsthis in a serial burst of four 8-bit pieces on the DQ bus. The mux anddemux blocks in the data interface are responsible for the conversionbetween the serial and parallel formats of the data.

[0149] DM is a data mask signal. It is used for byte masking of theincoming write data. It is not used with read data. Only one DM pin isrequired since the example implementation uses an eight-bit DQ bus. Ifthe DQ bus were wider, more DM pins would be allocated. It is treatedlike another write data bit by the interface logic. Note that the DMsignal is unidirectional, unlike the DQ and DQS signals, which arebi-directional.

[0150] The right side of FIG. 17 includes the signals that connect tothe DRAM core. These signals include:

[0151] COLCYC is a load signal. Its rising edge causes the W signal tobe loaded into a register 248 within the DRAM core 220. Its rising edgealso initiates a data transport operation to or from the core.

[0152] W is the write control signal. When it is a zero, the datatransport operation that is initiated by COLCYC is a read. When it is aone, the data transport operation that is initiated by COLCYC is awrite.

[0153] WD[3:0][7:0] is the write data bus. It is loaded into register246 in the DRAM core on the rising edge of COLCYC. From there it iswritten into the sense amplifiers which hold the currently selected row(page) of the DRAM core.

[0154] WE[3:0] is the write enable bus. It is loaded into register 246in the DRAM core on the rising edge of COLCYC. Each bit controls whetherthe associated eight bits of the WD bus is written to the senseamplifiers of the DRAM core.

[0155] RD[3:0][7:0] is the read data bus. It is driven from register 247in the DRAM core after the rising edge of COLCYC. It is valid until thenext rising edge of COLCYC.

[0156] The Write Demux block 240 accepts the write data DQ[7:0], thewrite mask DM, and the write data strobe DQS from the external memorycontroller component The DQS signal functions as a timing signal to loadserially-received bits from DQ[7:0]. The signals are received by the RBand RD receiver cells 250 and 251. There are two versions: RB and RD.The RB cell is used for signals which need to drive relatively largeloads. The RD cell is used for signals which need to drive relativelysmall loads. Both blocks have the same delay, controlled by calibrationlogic. These blocks are described with reference to FIGS. 26 and 27.

[0157] The DQS1 signal from the RB cell is used to clock a set ofregisters 254 which accumulate the four bits that appear serially oneach wire for each write operation. One of these registers is loaded onthe rising edge of DQS1, and the rest are loaded on the falling edge ofDQS1. Toggle flip-flop 249 alternates its state between low and high oneach falling edge of DQS2. It is forced to a low state by the RESETsignal which is applied when the component is first powered on. The DQS2signal is a delayed version of the DQS1 data strobe, using the delayelement 245.

[0158] The result is that the four nine-bit serial words DQ3, DQ2, DQ1,and DQ0 will all be valid for a timing window surrounding the fallingedge of DQS2 when the LD2 signal from toggle flip-flop 249 is high.These four serial words are loaded into register 241 on that fallingDQS2 edge.

[0159] When the complete 36 bit parallel word (WD1[3:0][7:0] andWE[3:0]) is loaded into register 241, it is then driven and loaded intoa intermediate pipeline register 244 on the rising edge of the WLDsignal. The output of this register drives the WD[3:0][7:0] write databus of the DRAM core. The DM bits are assembled on the WE[3:0] writemask bus in an identical manner.

[0160] The Read Mux block 242 accepts the read data RD[3:0][7:0] drivenfrom the DRAM core after the rising edge of COLCYC. The parallel word isloaded into four eight bit registers 255 on the first rising edge of theQLD signal (when QMX is asserted to one). The four eight bit pieces arethen shifted out serially onto the DQ[7:0] bus (when QMX is asserted tozero). The QEN signal is asserted to one enabling the output driver 258.Two-to-one multiplexers 256 are responsive to the QMX signal to controlwhether registers 255 are loaded from the RD[3:0][7:0] in response tothe QLD signal, or are loaded from the previous register 255. Note thatthe pattern “1010” is appended to the RD[3:0][7:0] bus to form thetiming signal on the DQS output. This timing information is treated likeanother data bit; the timing signals QLD and QMX shift the “1010” timinginformation onto the conductor used for the DQS signal.

[0161]FIG. 18 shows the timing of the signals from the block diagram inFIG. 17 for a read transaction. The first LD1 edge 270 is discussedabove with reference to FIG. 16. The second LD1 edge 272 (with the RDcommand) initiates a column read operation. The operations associatedwith the loading the column address were already described, withreference to FIG. 16. The operations associated with the transport ofthe read data begin with the rising COLCYC edge. The COLCYC rising edgeis delayed a time 2*t_(TOT)+t₈+t₄+t₄ after the second LD1 rising edge272. The rising edge of COLCYC drives the read data Qa on RD[3:0][7:0](corresponding to first column address Cxa) from register 247 after adelay of t_(DAC). This data remains valid for a time t_(DOH) after thenext rising edge of COLCYC.

[0162] This read data Qa is sampled by registers 255 at a time2*t_(TOT)+t₂₄ after the second rising edge of LD1 (in the center of thevalid window) by the first rising edge of the QLD control signal. TheQMX and QEN control signals are asserted high a time 2*t_(TOT)+t₂₃ afterthe second rising edge of LD1. The QEN signal will remain asserted highfor the time during which read data is being driven on the DQ and DQSpins. The QMX signal will remain high for the first rising edge of QLD,allowing the 32 bits of read data Qa[3:0][7:0] to be loaded into theserial output registers 255. The first eight bits Qa[3][7:0] will alsobe driven onto the DQ[7:0] pins a time t_(Q) after the first rising edgeof QLD. QMX will be left low for the next three QLD rising edges,allowing the remaining 24 bits Qa[2:0][7:0] to be shifted out.

[0163] The third LD1 edge 277 (with the RDA command) initiates a secondcolumn read operation. This command produces a second series ofoperations identical to that of the first column read, culminating indriving the second read data Qb[3:0][7:] onto the DQ[7:0] pins. Notethat the assertion of the QEN signal from the first read command mergeswith the assertion from the second read command; the QEN signal neverreturns to a low value between the commands.

[0164] The RDA command performs one set of operations not performed bythe RD command; automatic pre-charge. The third rising edge 277 of LD1causes the PLD signal to be asserted high at a time 2*t_(TOT)+t₂₄ later.This signal loads the Cxb bank address into a register 234 (FIG. 15) inthe address interface. The PRECH signal is asserted high a time2*t_(TOT)+t₃₂ after the third rising edge 277 of LD1. This signal loadsthe Cxb bank address into a register 236 (FIG. 15) in the DRAM core andstarts the pre-charge operation. The pre-charge operation requires atime t_(RP), at which point another ACT command can assert the SENSEsignal for that bank. The rising edge of PRECH must be at least a timet_(CPS) after the second falling edge of COLCYC (this is a coreconstraint).

[0165]FIG. 19 shows the timing of the signals from the block diagram inFIG. 17 for a write transaction. The second LD1 edge 272 (with the WRcommand) initiates a column write operation. The operations associatedwith the column address were already described. The operationsassociated with the transport of the write data begin at approximatelythe same time on the first rising edge of DQS. In the timing diagram,the rising edges of these two signals are shown as being coincident, asthe external memory controller will drive them. There may be differencesin the routing delay of the data (DQ, DM, and DQS) signals and thecontrol (LD, OP, and ADDR) signals on the wires between the controllerand the memory component. This will appear as an offset between therising edge 272 of LD1 and the rising edge of DQS. The logic in theexample implementation can accommodate an offset from +t_(WROFF) to−t_(WROFF). This range could be increased further, if it were necessary.

[0166] On the first rising edge of DQS in FIG. 19, the first piece ofwrite data Da[3][7:0] is valid on the DQ[7:0] bus. The remaining threepieces Da[2:0][7:0] are valid around the next three falling and risingedges of DQS. When all 32 bits have been loaded into individualregisters, they are loaded in parallel into a final 32-bit register 241(FIG. 17) in the DQS timing domain. This register drives theWD1[3:0][7:0] bus. The write mask information has been transferred fromthe DM pin onto the WE1[3:0] bus with an identical data path (the maskinformation may be treated like write data for timing purposes).

[0167] The WLD control signal is delayed by 2*t_(TOT)+t₁₁ after thesecond rising edge 272 of LD1 (with the WR command). The rising edge ofWLD causes register 244 to sample the WD1 and WE1 buses. This samplingpoint is designed to be in the center of the valid window for the dataon these buses so that the offset parameter +t_(WROFF) to −t_(WROFF) hasas much margin as possible. It is possible to adjust the delay path forthe WLD signal if the sampling point needs to be shifted because ofrouting differences in the control and data wires for the memorysubsystem.

[0168] The data on the WD and WE inputs to the DRAM core are sampled byregister 246 (FIG. 17) that is loaded on the rising edge of COLCYC. TheCOLCYC control signal is delayed by 2*t_(TOT)+t₈ +t₄+t₄ after the secondrising edge 272 of LD1 (with the WR command). The W control signal isdelayed by 2*t_(TOT)+t₁₅ after the second rising edge 272 of LD1, and isalso sampled by a register 248 that is loaded on the rising edge ofCOLCYC.

[0169] On the third rising edge of DQS in FIG. 19, the first piece ofwrite data Db[3][7:0] for the second column write is valid on theDQ[7:0] bus. The remaining three pieces Db[2:0][7:0] are valid aroundthe next three falling and rising edges of DQS. The 32 bits of thissecond column write are loaded and transferred to the WD and WE buses inexactly the same manner as the first column write. The data on the WDand WE inputs to the DRAM core are sampled by register 246 that isloaded on the rising edge of COLCYC. The COLCYC control signal isdelayed by 2*t_(TOT)+t₈ +t₄+t₄ after the third rising edge 277 of LD1(with the WRA command). The W control signal also sampled on this edge,as before.

[0170] The WDA command performs one set of operations not performed bythe WD command: automatic pre-charge. The third rising edge 277 of LD1cause the PLD signal (FIG. 15) to be asserted high at a time2*t_(TOT)+t₂₄ later. This signal loads the Cxb bank address into aregister 234 in the address interface (FIG. 15). The PRECH signal isasserted high a time 2*t_(TOT)+t₃₂ after the third rising edge 277 ofLD1. This signal loads the Cxb bank address into register 236 in theDRAM core and starts the pre-charge operation. The pre-charge operationrequires a time t_(RP), at which point another ACT command can assertthe SENSE signal for that bank. The rising edge of PRECH must be atleast a time t_(CPS) after the second falling edge of COLCYC (this is acore constraint).

[0171] In the described embodiment, timing information is carried on asingle, dedicated conductor corresponding to the DQS signal. However, inalternative embodiments such timing information might be encoded withthe data itself. In such alternative embodiments, both timinginformation and data information might be transferred on a single signalline. A transmitter would receive a timing signal and the data signal,and in response produce a single signal to be carried by a single signalline to a receiver. In response, the receiver would separate the datainformation and timing information into two signals. A disadvantage ofthis technique is that the signal line must use some of its signalingbandwidth for the timing information. However, the technique might bedesirable in some embodiments because it minimizes any skew between thedata and timing information (as there would be if two separate signallines were used).

[0172] Delay Element Calibration Circuit

[0173]FIG. 20 shows the logic contained within the calibration circuitor GEN block 222 in FIG. 15. On the left side of the figure, the TREF1supplies an external timing reference consisting of pulses whose risingedges are separated by intervals of TREF1. This signal is received by anRD block, and then serves as a clock for a one-bit register 302 whichcreates a signal NodeA and a three-bit register 304 which creates asignal NodeB. The NodeB signal is passed back to a three-bit incrementer306, so that a three-bit counter is formed. One-bit register 302 is fedfrom the most-significant (MS) bit of NodeB. The reason for this will beexplained in the text accompanying the next figure.

[0174] The NodeA signal and MS bit of NodeB signal are passed throughidentical buffers 308 to give signals NodeC and NodeE, respectively.NodeE is fed through a delay block 310, consisting of N_(REF) copies ofa D block. A D block is a delay element having a delay equal to t_(D),and will be described in more detail with reference to FIG. 24. A delayof t_(REF)=N_(REF) *t_(D) is thus applied to the NodeE signal, yieldingsignal NodeD. The NodeC and NodeD signals drive INC and IND inputs of acompare and control block (CC block) 312.

[0175] CC block 312 compares the two signals on its INC and IND inputsand adjusts a pair of output voltages V_(REFP) and V_(REFN) so that theedges of the two signals are aligned in time. When a steady statevoltage is reached, the delay between the pulses t_(REF1) of the TREF1signal will match the delay t_(REF) of the delay block N_(REF)*D (towithin the resolution supported by the CC block). The reference voltagescan now be used to create calibrated delays within the interface logic.

[0176] Pulses are applied periodically on the TREF1 input from anexternal source such as the memory controller. Because of this, thereference voltages are periodically adjusted to compensate for process,voltage, and temperature variations. In this manner, an external delayreference can be used to create precise internal delays.

[0177] Note that it is not necessary that the TREF1 provide a continuousstream of pulses. Rather, short bursts of pulses are provided at regularintervals. The length of the interval is a function of how quicklytemperature and supply voltage can change—this will typically be on theorder of milliseconds. The length of the burst of pulses that aresupplied will typically be on the order of 30 to 50 pulses—the CC block312 in FIG. 20 will take one negative or positive voltage step for everyeight TREF1 pulses, and the first one may be in the incorrect directionbecause of the unknown state of the GEN block 222 in FIG. 20 when thepulse burst is started.

[0178]FIG. 21 shows the timing of the signals in the GEN block 222 inthe previous figure. The three bits of NodeB count from 000 through 111repeatedly. The most-significant bit is thus a divided-by-eight versionof the TREF1 input signal. The most-significant bit of NodeB is delayedby a buffer to give NodeE, which is then passed through a delay element310 to give NodeD, which is delayed by t_(REF). The NodeA signal followsthe NodeB signal by exactly t_(REF1) because of the logic in the GENblock. This means that NodeC follows the NodeB signal by exactlyt_(REF), as well. Thus, the CC block adjusts the reference voltagesuntil t_(REF) is equal to t_(REF1).

[0179] Note that a simplified GEN block would consist of only the CCblock and the delay block N_(REF)*D. The TREF1 signal would be receivedby the RD block, and would drive the INC input and the input of thedelay block. The TREF8 signal would simply be a buffered version ofTREF1. The disadvantage of this simpler approach is its lack ofrobustness. The minimum and maximum delay range of t_(REF) would be{0.5*t_(REF1), 1.5*t_(REF1)}. If t_(REF) ever acquired a value outsideof this range is(at power-up, for example), the CC block would drive thereference voltages in the wrong direction. The corresponding range ofthe more complicated GEN cell in FIG. 20 is {0*t_(REF1), 4*t_(REF1)}.This larger capture range ensures that there is less chance of apower-up error. The cost is a three-bit incrementer, four register bits,and some buffers.

[0180] Compare and Control Block

[0181]FIG. 22 shows the logic inside the CC block 312 from FIG. 20. TheIN_(C) and IND signals are the load and data input, respectively, for aregister bit 320. The IN_(C) input, through a buffer 322, also controlsthe gates of N and P channel transistors 324 and 325 so that acontrolled amount of charge is steered from the supply voltages VDDA andGNDA to the reference voltages V_(REFN) and V_(REFP). The output of theregister bit 320 controls the gates of further N and P channeltransistors 328 and 329, to control the direction that the referencevoltages move.

[0182] There are four capacitors, which are charged to one of the twosupply voltages when IN_(C) is high. They are C_(N+), C_(N−), C_(P+),and C_(P−). The capacitors each have a capacitance of “C”. When IN_(C)is low, two of the four capacitors dump their charge into the capacitorsC_(REFP) and C_(REFN) on the reference voltage nodes V_(REFP) andV_(REFN). These two capacitors have the capacitive values N_(step)*C andN_(step)*C. Thus, every time there is a pulse on IN_(C), the referencevoltages will make a step of (VDDA−GNDA)/N_(step) in one direction orthe other. At the steady-state reference voltages, the steps willalternate between up and down. The value of N_(step) will be chosen as acompromise between the resolution of the steady state reference voltagesand the time required to reach the steady state values at power-up time.

[0183] It would be possible to add logic to the CC block so that itwould detect when it has made a series of steps in the same direction.It would then use a bigger capacitor to take bigger steps to thesteady-state reference voltages. Once it began taking steps in theopposite direction, it would use the smaller capacitors for better delayresolution.

[0184] Note that V_(REFP) and V_(REFN) will always step in oppositedirections. This will be clear when the details of the delay element aredescribed (FIG. 24). In FIG. 22, when the RESET input is asserted high,the V_(REFP) and V_(REFN) voltages are driven to the values of GNDA andVDDA, respectively by transistors 330. This corresponds to the shortestpossible delay in the delay element. After RESET is deasserted low, TheGEN block 222 will drive V_(REFP) higher and V_(REFN) lower, in steps of(VDDA−GNDA)/N_(step) until the steady state values are reached. Thiswill compensate for all process, temperature and voltage effects atpower-up time. Thereafter, the TREF1 input will be given a series ofpulses periodically to ensure that variations of temperature and voltagewill be tracked out and the reference delay will match the externaldelay within the resolution of the CC block.

[0185] Note also that the supply voltages VDDA and GNDA used by the CCblock will be dedicated supplies that are different from the suppliesused by the DRAM core and the data path logic of the interface. Thesededicated supplies will be used only for the blocks of logic thatgenerate precisely timed control signals. There will be less disturbanceon these supplies due to switching noise, and the calibrated timingintervals will be more accurate as a result. The VDDA and GNDA willconnect to the same external power supplies as the VDD and GND used bythe rest of the DRAM, but will have dedicated pins and a dedicated setof power supply wires inside the component.

[0186]FIG. 23 shows the timing of the CC block 312 when the referencevoltages are near their steady state values. The top diagram shows thecase where the t_(REF) delay of the delay block is too small, and thebottom diagram shows the case where the t_(REF) delay of the delay blockis too large.

[0187] In both diagrams, the time when IN_(C) is high (after the IN_(C)rising edge), the four capacitors C_(N+), C_(N−), C_(P+), and C_(P−)arecharged to the supply rails. While this is happening, the output of thesampling register is settling to the value that determines what happenswhen IN_(C) drops low.

[0188] In the top diagram, the IN_(D) input doesn't have enough delay,and the IN_(C) rising edge samples IN_(D) as a “1”. This means thatafter IN_(C) drops low, the charge will be dumped so that V_(REFP) isincreased and V_(REFN) is decreased.

[0189] In the bottom diagram, the IN_(D) input has too much delay, andthe IN_(C) rising edge samples IN_(D) as a “0”. This means that afterIN_(C) drops low, the charge will be dumped so that V_(REFP) isdecreased and V_(REFN) is increased.

[0190] Note that the time that IN_(C) remains high and low doesn'taffect the amount of charge dumped into the capacitors C_(REFP) andC_(REFN) on the reference voltage nodes V_(REFP) and V_(REFN). It isonly necessary to provide pulses on TREF1 with rising edges separated bythe t_(REF1) interval—the duty cycle of these pulses is not critical.

[0191] Delay Elements

[0192]FIG. 24 shows the internal details of a “D” cell delay block 340such as used in delay element 310 of the GEN block of FIG. 20. Delayelement 310 is actually N_(REF) copies of the D cell 340.

[0193] Each D cell 340 contains a plurality of “d” cell delay elements342. Each d cell 342 is a pair of inverters 343 connected to VDDAthrough P transistors 344 whose gate voltage is V_(REFP), and connectedto GNDA through N transistors 345 whose gate voltage is V_(REFN).

[0194] When V_(REFP) increases, the resistance of the P transistors 344increase, increasing the delay of a signal through the inverters 343.When V_(REFP) decreases, the resistance of the P transistors 344decreases, decreasing the delay of a signal through the inverters 343.

[0195] The behavior is complementary for an N transistor. When V_(REFN)decreases, the resistance of the N transistors 345 increases, increasingthe delay of a signal through the inverters 343. When V_(REFN)increases, the resistance of the N transistors 345 decreases, decreasingthe delay of a signal through the inverter 343.

[0196] At power-on, the V_(REFP) and V_(REFN) voltages are driven to thevalues of GNDA and VDDA, respectively. This corresponds to the shortestpossible delay in the delay element. The GEN block 222 will driveV_(REFP) higher and V_(REFN) lower until the steady state values arereached. Note that V_(REFP) and V_(REFN) will always step in theopposite direction.

[0197] Other voltage-controlled delay structures are possible. The onethat is described gives a good delay range with fairly modest arearequirements. It would also be possible to use a digitally-controlleddelay structure, in which delay elements were added and removed with amultiplexer structure. This would yield much coarser delay resolution,however. A hybrid delay unit with a coarse structure and a finestructure could also be used.

[0198] D cell 340 also includes a buffer 350 (inverter pair) forrestoring the nominal slew rate to a signal passing through the block.This permits the D cell to drive a larger load directly. The delay ofthe “D” cell is t_(D)=n*t_(d), where t_(d) is the “d” cell delay.

[0199]FIG. 25 shows an “N*D” cell 360. It consists of “N” of the “D”cells 340. The delay of the “N*D” cell is t_(N*D)=N *t_(D), where t_(D)is the “D” cell delay. The delay of the cell used in the GEN block 222(FIG. 20) is t_(REF)=N_(REF)*t_(D). The values of “n” and “N” will beimplementation dependent.

[0200] Receiver Blocks

[0201]FIG. 26 show details of the RB and RD receiver blocks shown inprevious figures. Note that these two blocks are the same except thatone is designed to drive a heavier load (the RB cell). The purpose ofthese blocks is to buffer their signals and to produce a uniform delayof T_(TOT) in each of their signals.

[0202] Each receiver block has a real signal path, shown in the upperpart of FIG. 26, and an image or reference signal path, shown in thelower part of FIG. 26. The image signal path receives the TREF8 signal(from the GEN block of FIG. 20) and produces a pair of referencevoltages V_(ADJP) and V_(ADJN) that, when applied to a delay block,cause the receiver block to produce a delay equal to t_(TOT).

[0203] The real signal path consists of an input signal IN passingthrough a receiver 360(a), a delay cell 362(a) comprising N_(ADJ) Dcells, and a buffer 364(a) to the output OUT.

[0204] The image signal path consists the TREF8 signal (from the GENblock of a FIG. 20) passing through an identical receiver 360(b),through a delay cell 362(b) (N_(ADJ)*D), and through a buffer 364(b).The buffer for the image signal drives a load that is equivalent to thatdriven by the buffer for the real signal. This image signal is fed intothe IN_(D) input of a CC block 366 (see FIG. 22). The TREF8 signal alsogoes through a second delay cell 368 with a delay oft_(TOT)=N_(TOT)*t_(D) and is fed into the IN_(C) input of the CC block366.

[0205] The reference voltages V_(ADJP) and V_(ADJN) produced by the CCblock control the delay of the identical N_(ADJ)*D blocks 362(a) and362(b). As a result, the pulses from the TREF8 signal will propagatethrough the two paths in the lower block, and will be compared in the CCcell 366. The CC cell will adjust the V_(ADJP) and V_(ADJN) voltages tomake the delay of the receiver 360(b), delay cell 362(b), and buffer364(b) equal to t_(TOT).

[0206] In the upper cell, the delay seen by the input signal IN throughthe receiver 360(a), delay cell 362(a), and buffer 364(a) will also beequal to t_(TOT) since all the components are matched and the V_(ADJP)and V_(ADJN) voltages are shared. If the delay of the receiver andbuffer change because of temperature and supply voltage variations, thedelay of the N_(ADJ)*D delay cell will change in a complementary fashionso the overall delay remains t_(TOT).

[0207]FIG. 27 shows a timing diagram for the RB and RD cells. The nodesalong the real signal path are shown, and it can be seen that the delayfrom the input node (NodeA) to the output node (NodeJ) is the sum oft_(TOT)=t_(REC)+t_(ADJ)+t_(BUF). The value of t_(TOT) will be chosen tobe greater than the maximum possible values (due to process, temperatureand voltage variations) of t_(REC), t_(ADJ), and t_(BUF) when theV_(ADJP) and V_(ADJN) voltages are at their minimum and maximum values,respectively (giving minimum delay). This ensures that the N_(ADJ)*Ddelay cell has enough range to compensate for the process, temperature,and voltage variations without adding unnecessary delay.

[0208] This example implementation of an asynchronous DRAM interfaceassumes that the real signal path of each RB and RD cell has a dedicatedimage or reference signal path. In an actual implementation, it islikely that the image signal paths could be shared among all real signalpaths that are matched. For example all the bits of the address inputADDR[13:0] could share one image path. This would reduce the cost ofcalibrating the RB and RD delay to the area of the (N_(ADJ)*D) delaycell plus a fraction of the image signal path cell. The V_(ADJP) andV_(ADJN) voltage signals would be routed to all the (matched) realsignal paths from the image signal path.

[0209] It would also be possible to use the real signal path to generateits own adjustment voltage. This requires that the real signal pathconsist of pulses with a repetition rate that is constrained by thelogic in the CC block. The advantage of this is that the delays aremeasured and adjusted in the real signal path, saving some area andperhaps making the timing calibration more accurate. The disadvantage isthat if a real path is not exercised often enough, its delay may drift.The advantage of the image signal path is that it can have itsadjustment voltage updated without interfering with its real signaloperation.

[0210] Timing Logic

[0211]FIG. 28 shows details of timing logic 202, also referred to as adecode block. The timing logic accepts the OP2[3:0] command bus from aninternal register and the LD1 signal that loads that register, andproduces a set of control and timing signals that are precisely shapedand timed. These control signals fan out to the asynchronous interfaceand DRAM core and orchestrate the various memory access operations asalready described.

[0212] There are five DEC blocks 401 which decode the four bit commandOP2 into five command signals, indicating an activate operation (ACT), acolumn operation (RD/WR/RDA/WRA), a column read operation (RD/RDA), anautomatic pre-charge operation (RDA/WRA), and a column write operation(WR/WRA).

[0213] These five signals then pass through a number of delay cells 402,each of which has a delay that is indicated in the figure. For example,the cell “N_(x)*D” generates the delay t_(x)=N_(x)*t_(D)=X*t_(D), wherethe value of “X” can be {1, 4, 8, 11, 23, 24}. These delay cells use thestandard reference voltages V_(REFP) and V_(REFN) because the delays arecalibrated to the reference delay t_(D) from the GEN cell. The EXP,REP2, and REP4 (each of which will be described below) then shape thedecoded and delayed signals cells.

[0214]FIG. 29 shows the internal logic for an exemplary DEC block 401.Again, this circuit includes a real signal path and an image orreference signal path. The real signal path is contained in the upperpart of the figure. It begins with the input bus OP2[3:0] passingthrough the “logic” block 405, which decodes the particular operation towhich the DEC block responds. This logic block, as an example, willconsist of a 2- or 3-input “and” gate.

[0215] The LD1 load signal passes through a delay block 406(a)(N_(DEC)*D). This provides a delay of t_(DEC)=N_(DEC)*t_(D) which willbe enough to match the load-to-output delay of the OP2 register 224(FIG. 15) and the delay of the “logic” block 405. The delayed LD1 signaland the decoded OP2 signal are and'ed with a gate 408(a) and then passedthrough a second delay cell 410(a) (N_(ADJ)*D), and a buffer 412(a) tothe output OUT.

[0216] Below the real signal path is the image signal path. It consistsof the TREF8 signal (from the GEN block of FIG. 20) passing throughidentical delay cells 406(b) and 410(b) (N_(DEC)*and N_(ADJ)*D) and gate408(b), and buffer 412(b). The image path buffer 412(b) drives a loadthat is equivalent to that driven by the buffer 412(a) for the realsignal. This image signal is fed into the IN_(D) input of a CC block414. The TREF8 signal also goes through a second delay cell 416 with adelay of t_(TOT)=N_(TOT)*t_(D) and is fed into the IN_(C) input of theCC block.

[0217] The reference voltages V_(ADJP) and V_(ADJN) produced by the CCblock 414 control the delay of the N_(ADJ)*D blocks. As a result, thepulses from the TREF8 signal will propagate through the two paths in thelower block, and will be compared in the CC cell. The CC cell willadjust the V_(ADJP) and V_(ADJN) voltages to make the delay of the twodelay cells 406(b), 410(b) and buffers 412(b) equal to t_(TOT).

[0218] In the upper cell, the delay seen by the input signal IN throughthe delay cell 406(a), and gate 408(a), delay cell 410(a), and buffer412(b) will also be equal to t_(TOT) since all the components arematched and the V_(ADJP) and V_(ADJN) voltages are shared. If the delayof the receiver and buffer change because of temperature and supplyvoltage variations, the delay of the N_(ADJ)*D delay cell will change ina complementary fashion so the overall delay remains t_(TOT).

[0219]FIG. 30 shows a timing diagram for the DEC cells. The nodes alongthe real signal path are shown, and it can be seen that the delay fromthe LD1 node (NodeA) to the output node (NodeJ) is the sum oft_(TOT)=t_(DEC)+t_(AND)+t_(ADJ)+t_(BUF). The value of t_(TOT) will bechosen to be greater than the maximum possible values (due to process,temperature and voltage variations) of t_(DEC), t_(AND), t_(ADJ), andt_(BUF) when the V_(ADJP) and V_(ADJN) voltages are at their minimum andmaximum values, respectively (giving minimum delay). This ensures thatthe N_(ADJ)*D delay cell has enough range to compensate for the process,temperature, and voltage variations without adding unnecessary delay.

[0220] This example implementation of an asynchronous DRAM interfaceassumes that the real signal path of each DEC cell has a dedicated imagesignal path. In an actual implementation, it is likely that the imagesignal paths could be shared among all real signal paths that arematched. This is particularly easy since each DEC cell fans out toeither one or two other cells that are also part of the Decode block.This would reduce the cost of calibrating the DEC delay to the area ofthe (N_(ADJ)*D) delay cell plus a fraction of the image signal pathcell. The V_(ADJP) and V_(ADJN) voltage signals would be routed to allthe (matched) real signal paths from the image signal path.

[0221]FIG. 31 shows the internal logic for the EXP blocks shown in FIG.28. The EXP block is one of the three blocks responsible for shaping thecontrol pulses that have been decoded and delayed. The real signal pathis contained in the upper part of the figure. It begins with the inputsignal IN passing through an “and” gate 440(a). The IN signal alsopasses through a delay block 442 (N_(LIM)*D). This provides a delay oft_(LIM)=N_(LIM)*t_(D). The inverted delayed IN signal and the undelayedIN signal are and'ed by gate 440(a) to give NodeC. This first circuit isa pulse lmiter—it accepts a pulse of unknown width (high time) andproduces a pulse of width t_(LIM). Note that the input signal widthshould be greater than t_(LIM)—this will be the case for all the signalsproduced by the decode blocks 401 in FIG. 28. The limited pulse is alsodelayed by t_(AND) relative to the input pulse, but the accumulateddelays of the EXP block will be adjusted to a calibrated total with adelay element.

[0222] The NodeC signal is expanded to the appropriate width by the nextcircuit. NodeC passes to the “set” input of an SR latch 446(a). Thiscauses the “q” output to be set high. NodeC also passes through a delayblock 448 (N_(EXP)*D) which provides a delay of t_(EXP)=N_(EXP)*t_(D).The delayed signal passes to the “reset” input of the SR latch 446(a),causing the “q” to return low after a pulse width of about t_(EXP).

[0223] The NodeF output of the SR latch 446(a) passes through a thirddelay block 450(a) (N_(ADJ)*D) and a buffer 452(a) which drives thecontrol signal to the interface logic and the DRAM core. This thirddelay line is used to add an adjustable delay so the total delay of theEXP block remains fixed at the desired value t_(TOT).

[0224] Below the real signal path is an image signal path. It consistsof the TREF8 signal (from the GEN block) passing through an identical“and” gate 440(b), SR latch 446(b), delay cell 450(b) (N_(ADJ)*D) andbuffer 452(b). The buffer for the image signal drives a load that isequivalent to that driven by the buffer for the real signal. This imagesignal is fed into the IN_(D) input of a CC block 454. The TREF8 signalalso goes through a second delay cell 456 with a delay oft_(TOT)=N_(TOT)*t_(D) and is fed into the IN_(C) input of the CC block.The reference voltages V_(ADJP) and V_(ADJN) produced by the CC block454 control the delay of the N_(ADJ)*D blocks 450(a) and 450(b).

[0225] The pulses from the TREF8 signal propagate through the two pathsin the lower block, and are compared in the CC cell 454. The CC celladjusts the V_(ADJP) and V_(ADJN) voltages to make the delay of the twodelay cells and buffer equal to t_(TOT). Note that the delay cells(N_(LIM)*D) and (N_(EXP)*D) are not included here because there is noneed to shape the TREF8 reference signal; the CC block only uses therelative positions of the IND and INC rising edges to generate theadjustment voltage.

[0226] In the upper cell, the delay seen by the input signal IN throughthe “and” gate, SR latch, delay cell and buffer will also be equal tot_(TOT) since all the components are matched and the V_(ADJP) andV_(ADJN) voltages are shared. If the delay of the receiver and bufferchange because of temperature and supply voltage variations, the delayof the N_(ADJ)*D delay cell will change in a complementary fashion sothe overall delay remains t_(TOT).

[0227]FIG. 32 shows a timing diagram for the EXP cells. The nodes alongthe real signal path are shown, and it can be seen that the delay fromthe IN node (NodeA) to the output node (NodeJ) is the sum oft_(TOT)=t_(AND)+t_(NOR)+t_(NOR)+t_(ADJ)+t_(BUF). The value of t_(TOT)will be chosen to be greater than the maximum possible values (due toprocess, temperature and voltage variations) of t_(AND), t_(NOR),t_(NOR), t_(ADJ), and t_(BUF) when the V_(ADJP) and V_(ADJN) voltagesare at their minimum and maximum values, respectively (giving minimumdelay). This ensures that the N_(ADJ)*D delay cell has enough range tocompensate for the process, temperature, and voltage variations withoutadding unnecessary delay.

[0228] Note also that the pulse width at NodeJ is (t_(EXP)−t_(NOR)). Thepulse width will have some variation with respect to temperature andvoltage since the t_(NOR)delay is uncalibrated. However, the position ofthe falling edge of all control signals is not important—it is onlynecessary to precisely position the rising edges. Thus, this slightvariation of pulse width will not affect the performance of the memorycomponent.

[0229] This example implementation of an asynchronous DRAM interfaceassumes that the real signal path of each EXP cell has a dedicated imagesignal path. In an actual implementation, it is likely that the imagesignal paths could be shared among all real signal paths that arematched. This could be accomplished by adding dummy loading to the realsignals so that all EXP blocks see the same effective load. This wouldreduce the cost of calibrating the DEC delay to the area of the(N_(ADJ)*D) delay cell plus a fraction of the image signal path cell.The V_(ADJP) and V_(ADJN) voltage signals would be routed to all the(matched) real signal paths from the image signal path.

[0230]FIG. 33 shows the internal logic for a REP2 block such as shown inFIG. 28. This is one of the three blocks responsible for shaping thecontrol pulses that have been decoded and delayed. A real signal path iscontained in the upper part of the figure. It begins with the inputsignal IN passing through an “and” gate 460(a). The IN signal alsopasses through a delay block 462 (N_(LIM)*D). This provides a delay oft_(LIM)=N_(LIM)*t_(D). The inverted delayed IN signal and the undelayedIN signal are and'ed by gate 460(a) to give NodeC. This first circuit isa pulse limiter—it accepts a pulse of unknown width (high time) andproduces a pulse of width t_(LIM). Note that the input signal widthshould be greater than t_(LIM)—this will be the case for all the signalsproduced by the decode blocks 401 in FIG. 28. The limited pulse is alsodelayed by t_(AND) relative to the input pulse, but the is accumulateddelays of the REP2 block will be adjusted to a calibrated total with adelay element.

[0231] The NodeC signal is expanded to the appropriate width by the nextcircuit. NodeC passes to the “set” input of an SR latch 464(a). Thiscauses the “q” output to be set high. NodeC also passes through a delayblock 466 (N_(EXP2)*D) which provides a delay oft_(EXP2)=N_(EXP2)*t_(D). The delayed signal passes to the “reset” inputof the SR latch, causing the “q” to return low after a pulse width ofabout t_(EXP).

[0232] The NodeF output of the SR latch 464(a) passes through an “or”gate 468(a). The NodeF signal also passes through a delay block 470(N_(REP2)*D). This provides a delay of t_(REP2)=N_(REP2)*t_(D). Thedelayed NodeF signal and the undelayed NodeF signal are or'ed to giveNodeH. The values of t_(EXP2)and t_(REP2) are chosen so that the twopulses overlap and merge. This is because the REP2 block produces theenable signal for the output driver. It must remain asserted (withoutglitching low) during the whole time that read data is driven.

[0233] The NodeH output of the “or” gate passes through a third delayblock 472(a) (N_(ADJ)*D) and a buffer 474(a) which drives the controlsignal to the interface logic and the DRAM core. This third delay lineis used to add an adjustable delay so the total delay of the REP2 blockremains fixed at the desired value t_(TOT).

[0234] Below the real signal path is an image signal path. It consistsof the TREF8 signal (from the GEN block of FIG. 20) passing through anidentical “and” gate 460(b), SR latch 464(b), delay cell 472(b)(N_(ADJ)*D), “or” gate 468(b), and buffer 474(b). The buffer 474(b) forthe image signal drives a load that is equivalent to that driven by thebuffer 474(a) for the real signal. This image signal is fed into theIN_(D) input of a CC block 476. The TREF8 signal also goes through asecond delay cell with a delay of t_(TOT)=N_(TOT)*t_(D) and is fed intothe IN_(C) input of the CC block 478. The reference voltages V_(ADJP)and V_(ADJN) produced by the CC block control the delay of the N_(ADJ)*Dblocks.

[0235] The pulses from the TREF8 signal will propagate through the twopaths in the lower block, and will be compared in the CC cell 478. TheCC cell will adjust the V_(ADJP) and V_(ADJN) voltages to make the delayof the two delay cells and buffer equal to t_(TOT). Note that the delaycells (N_(LIM)*D), (N_(EXP2)*D) and (N_(REP2)*D) are not included herebecause there is no need to shape the TREF8 reference signal; the CCblock only uses the relative positions of the IN_(D) and IN_(C) risingedges to generate the adjustment voltage.

[0236] In the upper cell, the delay seen by the input signal IN throughthe “and” gate, SR latch, delay cell, “or” gate, and buffer will also beequal to t_(TOT) since all the components are matched and the V_(ADJP)and V_(ADJN) voltages are shared. If the delay of the receiver andbuffer change because of temperature and supply voltage variations, thedelay of the N_(ADJ)*D delay cell will change in a complementary fashionso the overall delay remains t_(TOT).

[0237]FIG. 34 shows a timing diagram for the REP2 cell of FIG. 33. Thenodes along the real signal path are shown, and it can be seen that thedelay from the IN node (NodeA) to the output node (NodeJ) is the sum oft_(TOT)=t_(AND)+t_(NOR)+t_(NOR)+t_(OR)+t_(ADJ)+t_(BUF). The value oft_(TOT) will be chosen to be greater than the maximum possible values(due to process, temperature and voltage variations) of t_(AND),t_(NOR), t_(NOR), t_(OR), t_(ADJ), and t_(BUF) when the V_(ADJP) andV_(ADJN) voltages are at their minimum and maximum values, respectively(giving minimum delay). This ensures that the N_(ADJ)*D delay cell hasenough range to compensate for the process, temperature, and voltagevariations without adding unnecessary delay.

[0238] Note also that the pulse width at NodeJ is(t_(EXP2)+t_(REP2)−t_(NOR)). The pulse width will have some variationwith respect to temperature and voltage since the t_(NOR)delay isuncalibrated. However, the position of the falling edge of all controlsignals is not important—it is only necessary to precisely position therising edges. Thus, this slight variation of pulse width will not affectthe performance of the memory component.

[0239] If the subsequent column operation is also a RD or RDA command,there will be another pulse on NodeA a time t_(CC) after the first pulse(dotted line). The pulse that is produced a time t_(TOT) later on NodeJwill be merged with the first pulse because of the “or” gate that drivesNodeH. This ensures that the output driver remains on when driving readdata from consecutive read accesses.

[0240] This example implementation of an asynchronous DRAM interfaceassumes that the real signal path of the REP2 cell has a dedicated imagesignal path (i.e., only one REP2 cell is used in this example). Otherimplementations might use more than one REP2 cell, in which case theimage signal paths could be shared among all real signal paths that arematched. This could be accomplished by adding dummy loading to the realsignals so that all REP2 blocks see the same effective load. This wouldreduce the cost of calibrating the DEC delay to the area of the(N_(ADJ)*D) delay cell plus a fraction of the image signal path cell.The V_(ADJP) and V_(ADJN) voltage signals would be routed to all the(matched) real signal paths from the image signal path.

[0241]FIG. 35 shows the internal logic for a REP4 block such as shown inFIG. 28. This is one of the three blocks responsible for shaping thecontrol pulses that have been decoded and delayed. The real signal pathis contained in the upper part of the figure. It begins with the inputsignal IN passing through an “and” gate 500(a). The IN signal alsopasses through a delay block 502 (N_(LIM)*D). This provides a delay oft_(LIM)=N_(LIM)*t_(D). The inverted delayed IN signal and the undelayedIN signal are and'ed by gate 500(a) to give NodeC. This first circuit isa pulse limiter—it accepts a pulse of unknown width (high time) andproduces a pulse of width t_(LIM). Note that the input signal widthshould be greater than t_(LIM)—this will be the case for all the signalsproduced by the decode blocks 401 in FIG. 28. The limited pulse is alsodelayed by t_(AND) relative to the input pulse, but the accumulateddelays of the REP4 block will be adjusted to a calibrated total with adelay element.

[0242] The NodeC output of the pulse limiter passes through an “or” gate504(a). The NodeF signal also passes through three delay blocks 506,507, and 508 (NREP₄*D). Each provides a delay of t_(REP4)=NREP₄*t_(D).The three delayed NodeF signals and the undelayed NodeF signal are or'edat gate 504(a) to give NodeH. The values of t_(LIM) and t_(RP) ₄ arechosen so that the four pulses do not overlap. This is because the REP4block produces the load signal for the output registers 255 (FIG. 17).The rising edge of the first pulse loads in the parallel read data (andallows the first piece of it to be driven out), and the rising edges ofthe next three pulses shift the remaining three pieces out.

[0243] The NodeH output of the “or” gate 504(a) passes through a thirddelay block 510(a) (N_(ADJ)*D) and a buffer 512(b) which drives thecontrol signal to the interface logic and the DRAM core. This thirddelay line is used to add an adjustable delay so the total delay of theREP4 block remains fixed at the desired value t_(TOT).

[0244] Below the real signal path is the image signal path. It consistsof the TREF8 signal (from the GEN block of FIG. 20) passing through anidentical “and” gate 500(b), “or” gate 504(b), delay cell 510(b)(N_(ADJ)*D), and buffer 512(b). The buffer 512(b) for the image signaldrives a load that is equivalent to that driven by the buffer 512(a) forthe real signal. This image signal is fed into the IN_(D) input of a CCblock 514. The TREF8 signal also goes through a second delay cell 516with a delay of t_(TOT)=N_(TOT)*t_(D) and is fed into the IN_(C) inputof the CC block 514. The reference voltages V_(ADJP) and V_(ADJN)produced by the CC block control the delay of the N_(ADJ)*D blocks510(a) and 510(b).

[0245] The pulses from the TREF8 signal will propagate through the twopaths in the lower block, and will be compared in the CC cell. The CCcell will adjust the V_(ADJP) and V_(ADJN) voltages to make the delay ofthe two delay cells and buffer equal to t_(TOT). Note that the delaycells (N_(LIM)*D) and (N_(REP4)*D) are not included here because thereis no need to shape the TREF8 reference signal; the CC block only usesthe relative positions of the IN_(D) and IN_(C) rising edges to generatethe adjustment voltage.

[0246] In the upper cell, the delay seen by the input signal IN throughthe “and” gate, “or” gate, delay cell, and buffer will also be equal tot_(TOT) since all the components are matched and the V_(ADJP) andV_(ADJN) voltages are shared. If the delay of the receiver and bufferchange because of temperature and supply voltage variations, the delayof the N_(ADJ)*D delay cell will change in a complementary fashion sothe overall delay remains t_(TOT).

[0247]FIG. 36 shows a timing diagram for a REP4 cell such as shown inFIG. 35. The nodes along the real signal path are shown, and it can beseen that the delay from the IN node (NodeA) to the output node (NodeJ)is the sum of t_(TOT)=t_(AND)+t_(OR)+t_(ADJ)+t_(BUF). The value oft_(TOT) will be chosen to be greater than the maximum possible values(due to process, temperature and voltage variations) of t_(AND), t_(OR),t_(ADJ), and t_(BUF) when the V_(ADJP) and V_(ADJN) voltages are attheir minimum and maximum values, respectively (giving minimum delay).This ensures that the N_(ADJ)*D delay cell has enough range tocompensate for the process, temperature, and voltage variations withoutadding unnecessary delay.

[0248] The initial pulse on NodeA becomes four pulses, the first delayedby t_(TOT), the rest following at intervals of t_(REP4). Each pulse isasserted for t_(LIM).

[0249] If a subsequent column operation is also a RD or RDA command,there will be another pulse on NodeA a time t_(CC) after the first pulse(dotted line). The pulse that is produced a time t_(TOT) later on NodeJwill be NodeA a time t_(CC) after the first pulse. The minimum t_(CC)value will be equal to 4*t_(REP4).

[0250] This example implementation of an asynchronous DRAM interfaceassumes that the real signal path of the REP4 cell has a dedicated imagesignal path (i.e., only one REP4 cell is used in this example). Otherimplementations might use more than one REP4 cell, in which case theimage signal paths could be shared among all real signal paths that arematched. This could be accomplished by adding dummy loading to the realsignals so that all REP4 blocks see the same effective load. This wouldreduce the cost of calibrating the DEC delay to the area of the(N_(ADJ)*D) delay cell plus a fraction of the image signal path cell.The V_(ADJP) and V_(ADJN) voltage signals would be routed to all the(matched) real signal paths from the image signal path.

[0251] Fifth Embodiment With Delayed Read Data

[0252]FIGS. 37 and 38 show an alternative embodiment in which extralogic has been added to permit read data to be delayed by arbitrary,programmable time intervals. This might be important to ensure that theread data returns to the controller device after a fixed delay from whenthe read address is first transmitted, regardless of how far the memorycomponent is located from the controller. If, for example, there weretwo ranks of memory devices present on the memory bus, the closer rankwould be programmed with enough extra delay to compensate for the longerround trip flight time to the further rank. When a controller issued aread address to either rank, the read data would appear at the sameabsolute time at the controller pins.

[0253]FIG. 37 shows the data interface logic of an asynchronous memorydevice in accordance with this alternative embodiment. Most componentsare identical to those already discussed, and have been referenced withidentical numerals. An extra register 600 has been inserted in the pathof the read data, and is loaded by the rising edge of the new signalQLD0. This register can be configured to extend the valid window of theread data. It might not be necessary if the programmed delay valuesspanned a fairly small range, but would be needed for a larger range.The QLD0 signal is asserted at the same time that the QMX signal is alsoasserted high. This will give a time t_(D) for the read data that islatched in this register to propagate through the multiplexerscontrolled by the QMX signal and to set up the registers that are loadedby the rising edge of the QLD signal. The valid window of the RD readdata bus from the DRAM core is large enough to accommodate this earliersampling point.

[0254] As shown in FIG. 38, a four-to-one multiplexer 602 has beeninserted into the path of the signal that generates the QMX, QLD, QEN,and the new QLD0 signal. This multiplexer is controlled by a Qsel[3:0]programming bus. This bus will typically be driven from a controlregister in the DRAM that is loaded by the memory controller at systeminitialization time. It might also be driven from DRAM pins that arededicated or shared with another function, or from fuses on the DRAMdevice, or by some equivalent technique.

[0255] The multiplexer 602 has four inputs, which receive versions ofthe LD1 signal that have been delayed by successively larger intervalsby delay elements 604. The value of Qsel[3:0] will enable an undelayedsignal, or will enable one of three delayed versions of the signal, withincremental delays of 1*t_(D), 2*t_(D), and 3*t_(D). This will cause allfour of the affected signals to shift together in time, causing the readdata bit windows on the external pins of the DRAM device to shift.

[0256] Conclusion

[0257] Although details of specific implementations and embodiments aredescribed above, such details are intended to satisfy statutorydisclosure obligations rather than to limit the scope of the followingclaims. Thus, the invention as defined by the claims is not limited tothe specific features described above. Rather, the invention is claimedin any of its forms or modifications that fall within the proper scopeof the appended claims, appropriately interpreted in accordance with thedoctrine of equivalents.

1. A memory device comprising: one or more address registers that load areceived memory address at a time indicated by a received input loadsignal; one or more delay elements that asynchronously generate a dataregister load signal at a predetermined time after the received inputload signal; and one or more data registers that load memory data at atime indicated by the data register load signal.
 2. A memory device asrecited by claim 1, wherein the memory data is received memory data,said one or more data registers comprising a write data register thatloads the received memory data, the memory device having memory cellsthat subsequently are loaded from the write data register.
 3. A memorydevice as recited by claim 1, wherein the one or more data registersload the memory data from memory cells of the memory device.
 4. A memorydevice as recited by claim 1, further comprising one or more commandregisters that load received command information at the time indicatedby the received input load signal.
 5. A memory device as recited byclaim 1, further comprising multiple banks of memory that are capable ofbeing independently accessed.
 6. A memory device as recited by claim 1,wherein the one or more delay elements are configurable, subsequent todevice manufacture, to vary the predetermined time.
 7. A memory deviceas recited by claim 1, wherein: the one or more data registers load thememory data from memory cells of the memory device; the memory devicefurther comprising one or more additional delay elements that generatetiming signals in response to the single input load signal to shift aplurality of bits from the one or more data registers onto a singleoutput conductor.
 8. A memory device as recited by claim 1, wherein: theone or more data registers load the memory data from memory cells of thememory device; the memory device generates a timing signal on a timingsignal conductor to indicate valid read data on a set of data signalconductors.
 9. A memory device as recited by claim 1, wherein: the oneor more data registers load the memory data from memory cells of thememory device; the memory device encodes timing information and memorydata on a single conductor.
 10. A memory device as recited by claim 1,further comprising: demultiplexing logic that receives bits serially andassembles the serially-received bits into parallel words that are loadedinto the one or more memory registers.
 11. A memory device as recited byclaim 1, wherein the memory device receives a timing signal on a timingsignal conductor to indicate valid write data on a set of data signalconductors.
 12. A memory device as recited by claim 1, wherein thememory device receives timing information and memory data on a singleconductor.
 13. A memory device as recited by claim 1, wherein the one ormore delay elements are calibrated to a reference generated within thememory device.
 14. A memory device as recited by claim 1, wherein: theone or more delay elements are calibrated to a reference generatedwithin the memory device; and the one or more delay elements areconfigurable, subsequent to device manufacture, to vary thepredetermined time.
 15. A memory device as recited by claim 1, wherein:the one or more delay elements are calibrated to a reference generatedwithin the memory device; the one or more delay elements areconfigurable, subsequent to device manufacture, to vary thepredetermined time; and the one or more delay elements are internallycompensated for temperature and voltage variations.
 16. A memory deviceas recited by claim 1, wherein the one or more delay elements arecalibrated in response to one or more signals received from a sourceexternal to the memory device.
 17. A memory device as recited by claim1, wherein the delay elements are changeable in response to a pair oftiming events received from a source external to the memory device. 18.A memory device as recited by claim 1, wherein the delay elements arechangeable in response to a pair of timing events received from a sourceexternal to the memory device, the timing events being asynchronous toother signals used within the memory device.
 19. A memory device asrecited by claim 1, wherein the delay elements are changeable inresponse to a pair of timing events received on a single conductor ofthe memory device from a source external to the memory device.
 20. Amemory device as recited by claim 1, wherein the delay elements arechangeable in response to a pair of timing events received on a pair ofconductors of the memory device from a source external to the memorydevice.
 21. A memory device as recited by claim 1, wherein the delayelements are changeable in response to one or more timing signalsreceived on a conductor that also carries the input load signal.
 22. Amemory device as recited by claim 1, wherein the delay elements arechangeable in response to one or more timing signals encoded on anaddress bus.
 23. A memory device as recited by claim 1, wherein thedelay elements are changeable in response to one or more timing signalsencoded on a command bus.
 24. A memory device as recited by claim 1,wherein the delay elements are changeable in response to one or moretiming signals encoded on a data bus.
 25. A memory device as recited byclaim 1, wherein the delay elements are calibrated to one or moresignals received from a source external to the memory device, said oneor more signals being received periodically to compensate fortemperatures and voltage variations in the memory device.
 26. A memorydevice as recited by claim 1, wherein the received input load signalcomprises a plurality of gated logic signals.
 27. A memory device asrecited by claim 1, wherein the delay elements are changeable aftermemory device manufacture by selecting between two or more fixed delays.28. A memory device as recited by claim 1, wherein the delay elementsare calibrated using feedback.
 29. A memory device as recited by claim1, further comprising: a plurality of pipeline registers that are loadedasynchronously to complete memory access cycles.
 30. A memory device asrecited by claim 1, further comprising: a plurality of pipelineregisters that are signaled asynchronously in a predetermined sequenceto complete memory access cycles; and timing logic responsive to thereceived input load signal to signal the pipeline registersasynchronously in the predetermined sequence.
 31. A memory device asrecited by claim 1, further comprising: a plurality of pipelineregisters that are signaled in a predetermined sequence to completememory access cycles; and wherein the one or more delay elements areresponsive to the received input load signal to produce asynchronouslytimed load signals that signal the pipeline registers in thepredetermined sequence.
 32. A memory device as recited by claim 1,further comprising a plurality of memory cells, wherein reads and writesof the memory cells are timed asynchronously.
 33. A memory device asrecited by claim 1, further comprising a plurality of memory cells,wherein reads and writes of the memory cells are performed atpredetermined, asynchronous delays following the received input loadsignal.
 34. A memory device as recited by claim 1, further comprising aplurality of memory cells, wherein: reads and writes of the memory cellsare performed at asynchronous delays following the received input loadsignal; and the asynchronous delays are changeable after memory devicemanufacture;
 35. A memory device comprising: one or more addressregisters that load a received memory address at a time indicated by areceived input load signal; an output bus; one or more delay elementsthat asynchronously generate a data enable signal at a predeterminedtime after the received input load signal to present read data on theoutput bus.
 36. A memory device as recited in claim 35, wherein the oneor more delay elements are configurable, subsequent to devicemanufacture, to vary the predetermined time.
 37. A memory device asrecited in claim 35, wherein the one or more delay elements arecalibrated in response to one or more signals received from a sourceexternal to the memory device.
 38. A memory device comprising: one ormore address registers that load a received memory address at a timeindicated by a received input load signal; one or more data registersthat load memory data at a time indicated by an asynchronously receiveddata register load signal.
 39. A memory device as recited in claim 38,further comprising: a plurality of memory cells; wherein the one or moredata registers load memory data from the memory cells at the timeindicated by the asynchronously received data register load signal. 40.A memory device as recited in claim 38, further comprising: a data bus;wherein the one or more data registers load memory data from the databus at the time indicated by the asynchronously received data registerload signal.
 41. A memory device comprising: one or more addressregisters that load a received memory address at a time indicated by areceived input load signal; an output bus; an output driver that isresponsive to a asynchronously received enable signal to present readdata on the output bus.
 42. A memory device comprising: a memory arraythat is accessed by sensing a memory row and then accessing one or morememory columns of the sensed memory row; a plurality of delay elementsthat are responsive to input load signals to produce correspondingsequences of asynchronously timed register load signals; a sequence ofaddress registers that receive addresses and that advance the addressesthrough the address registers in response to the sequences ofasynchronously timed register load signals; and wherein the memory arrayis responsive to addresses that have advanced through the sequence ofaddress registers.
 43. A memory device as recited in claim 42, furthercomprising one or more row access delay elements that receive a rowaccess signal and asynchronously delay the row access signal to producea row sense signal.
 44. A memory device as recited in claim 42, whereineach input load signal comprises a transition on a single conductor. 45.A memory device as recited in claim 42, further comprising: an addressbus that receives row addresses and column addresses.
 46. A memorydevice as recited in claim 42, further comprising: a command bus thatreceives both row and column commands.
 47. A memory device as recited inclaim 42, further comprising: a command bus that receives row and columncommands in conjunction with the input load signal.
 48. A memory deviceas recited in claim 42, wherein the delay elements have matching delaysand are grouped to produce multiples of the matching delays.
 49. Amemory device as recited in claim 42, wherein the delay elements havematching delays that are calibrated collectively.
 50. A memory device asrecited in claim 42, wherein the delay elements have matching delaysthat are calibrated collectively and periodically.
 51. A memory deviceas recited in claim 42, wherein the delay elements are configurableafter memory device manufacture to vary timing within the memory device.52. A memory device as recited by claim 42, wherein the delay elementshave matching delays that are calibrated to a reference generated withinthe memory device.
 53. A memory device as recited by claim 42, whereinthe delay elements have matching delays that are calibrated to one ormore signals received from a source external to the memory device.
 54. Awave-pipelined memory system comprising a memory controller; a pluralityof memory devices; at least one bus extending between the memorycontroller and the plurality of memory devices, the bus having apropagation delay; wherein the memory devices and memory controllerdrive signals on the bus, at least some of said signals having durationsthat are shorter than the propagation delay of the bus; one or moreinput load signal lines that extends between the memory controller andat least a particular one of the memory devices, the one or more inputload signal lines carrying an input load signal that initiates a memoryaccess cycle in said particular one of the memory devices; saidparticular one of the memory devices being responsive to the input loadsignal to load memory data at a predetermined, asynchronous timefollowing the input load signal.
 55. A wave-pipelined memory system asrecited in claim 54, wherein said at least one bus comprises an addressbus.
 56. A wave-pipelined memory system as recited in claim 54, whereinsaid at least one bus comprises a data bus.
 57. A wave-pipelined memorysystem as recited in claim 54, wherein said at least one bus comprises abi-directional data bus.
 58. A wave-pipelined memory system as recitedin claim 54, wherein said particular one of the memory devices loads anaddress from said at least one bus in response to the input load signal.59. A wave-pipelined memory system as recited in claim 54, wherein: thememory controller sends a first input load signal to initiate a firstmemory access cycle; the memory controller sends a second input loadsignal to initiate a second memory access cycle prior to completion ofthe first memory access cycle.
 60. A wave-pipelined memory system asrecited in claim 54, wherein said particular one of the memory devicesis responsive to the input load signal to load the memory data from saidat least one bus.
 61. A wave-pipelined memory system as recited in claim54, wherein said particular one of the memory devices is responsive tothe input load signal to load the memory data from memory cells of thememory device.
 62. A wave-pipelined memory system as recited in claim54, wherein said particular one of the memory devices is responsive tothe input load signal to enable memory data on said at least one bus ata predetermined, asynchronous time following the input load signal. 63.A memory device comprising: memory access logic that receives memoryaccess initiation signals and performs pipelined memory access cycles inresponse, the memory access logic having pipeline elements that aresignaled in sequence to complete the memory access cycles; matched delayelements that are collectively adjustable to produce matching delaysthat are asynchronous within the memory device; the matched delayelements being configured to produce asynchronously timed pipeline loadsignals in response to the memory access initiation signals, to load thepipeline elements of the memory access logic in sequence.
 64. A memorydevice as recited in claim 63, further comprising: delay calibrationlogic that includes at least one of the matched delay elements, whereinthe delay calibration logic receives a calibration signal andcollectively adjusts the matched delay elements until said at least oneof the matched delay elements has a delay corresponding to the receivedcalibration signal.
 65. A memory device as recited in claim 63, furthercomprising: delay calibration logic that includes at least one of thematched delay elements, wherein the delay calibration circuit receives acalibration signal and collectively adjusts the matched delay elementsuntil said at least one of the matched delay elements has a delaycorresponding to the received calibration signal; and wherein the delaycalibration logic operates periodically to adjust the matched delayelements.
 66. A memory device as recited in claim 63, furthercomprising: delay calibration logic that includes at least one of thematched delay elements, wherein the delay calibration circuit receives acalibration signal and collectively adjusts the matched delay elementsuntil said at least one of the matched delay elements has a delaycorresponding to the received calibration signal; and wherein thecalibration signal is received from an external source and comprises tworelatively timed events.
 67. A memory device as recited in claim 63,further comprising: delay calibration logic that includes at least oneof the matched delay elements, wherein the delay calibration circuitreceives a calibration signal and collectively adjusts the matched delayelements until said at least one of the matched delay elements has adelay corresponding to the received calibration signal; and wherein thecalibration signal is received on a single input conductor from anexternal source and comprises two relatively timed signal transitions.68. A memory device as recited in claim 63, further comprising: delaycalibration logic that includes at least one of the matched delayelements, wherein the delay calibration circuit receives a calibrationsignal and collectively adjusts the matched delay elements until said atleast one of the matched delay elements has a delay corresponding to thereceived calibration signal; and wherein the calibration signal isreceived on two input conductors from an external source and comprisestwo relatively timed signal transitions.
 69. A memory device as recitedin claim 63, further comprising: delay calibration logic that includesat least one of the matched delay elements, wherein the delaycalibration circuit receives a calibration signal and collectivelyadjusts the matched delay elements until said at least one of thematched delay elements has a delay corresponding to the receivedcalibration signal; and wherein the calibration signal is received froman external source and is asynchronous within the memory device.
 70. Amemory device as recited in claim 63, further comprising: delaycalibration logic that includes at least one of the matched delayelements, wherein the delay calibration circuit receives a calibrationsignal and collectively adjusts the matched delay elements until said atleast one of the matched delay elements has a delay corresponding to thereceived calibration signal; and wherein the memory access logicreceives memory access initiation signals on a particular inputconductor; and wherein the calibration logic receives the calibrationsignal on said particular input conductor.
 71. A memory device asrecited in claim 63, further comprising: delay calibration logic thatincludes at least one of the matched delay elements, wherein the delaycalibration circuit receives a calibration signal and collectivelyadjusts the matched delay elements until said at least one of thematched delay elements has a delay corresponding to the receivedcalibration signal; and wherein the memory access initiation signalscomprise address load signals that are received on a particular inputconductor; and wherein the calibration logic receives the calibrationsignal on said particular input conductor.
 72. A method of memory accesscomprising: receiving successive memory access initiation signals;asynchronously pipelining a plurality of memory access operations inresponse to the memory access initiation signals.
 73. A method asrecited in claim 72, wherein the memory access initiation signalscomprise address load signals.
 74. A method as recited in claim 72,further comprising: concurrently pipelining the plurality of memoryaccess operations.
 75. A method as recited in claim 72, whereinasynchronously pipelining comprises: asynchronously advancing data ofeach memory operation through a plurality of pipeline registers.
 76. Amethod as recited in claim 72, wherein asynchronously pipeliningcomprises: asynchronously advancing address data of each memoryoperation through a plurality of pipeline registers.
 77. A method asrecited in claim 72, further comprising: concurrently pipelining theplurality of memory access operations; wherein asynchronously pipeliningcomprises asynchronously advancing data of each memory operation througha plurality of pipeline registers.
 78. A method as recited in claim 72,further comprising: for each memory access initiation signal,successively and asynchronously delaying the memory access initiationsignal to produce a corresponding sequence of asynchronously timedpipeline signals that control said pipelining.
 79. A method as recitedin claim 72, further comprising: for each memory access initiationsignal, successively and asynchronously delaying the memory accessinitiation signal to produce a sequence of asynchronously timed pipelinesignals; wherein said pipelining comprises signaling pipeline registerswith the asynchronously timed pipeline signals.
 80. A method as recitedin claim 72, further comprising: producing delays in the memory devicewith matching delay elements, wherein the matching delay elements arecollectively adjustable.
 81. A method as recited in claim 72, furthercomprising: producing delays in the memory device with sets of matchingdelay elements, wherein the matching delay elements are collectivelyadjustable. periodically calibrating the matching delay elements withreference to an externally supplied timing reference.
 82. A memorydevice comprising: one or more address registers that load a receivedmemory address at a time indicated by a received input load signal; oneor more delay elements that asynchronously delay the received input loadsignal; a memory access logic that is responsive to the delayed inputload signal to perform a memory operation; wherein the delay elementsare calibrated to one or more calibration signals received from a sourceexternal to the memory device.
 83. A memory device as recited in claim82, wherein the one or more delay elements comprise a plurality ofmatched delay elements that are collectively adjustable to producematching delays that are asynchronous within the memory device.
 84. Amemory device as recited in claim 82, wherein: the one or more delayelements comprise a plurality of matched delay elements that arecollectively adjustable to produce matching delays that are asynchronouswithin the memory device; the memory device further comprises delaycalibration logic that includes at least one of the matched delayelements; the delay calibration logic collectively adjusts the matcheddelay elements until said at least one of the matched delay elements hasa delay corresponding to the one or more calibration signals.
 85. Amemory device as recited in claim 82, wherein the delay elements arecalibrated periodically to the one or more calibration signals.
 86. Amemory device as recited in claim 82, wherein the one or more delayelements are calibrated using feedback.
 87. A memory device as recitedin claim 82, wherein the one or more calibration signals comprise tworelatively timed signal transitions.
 88. A memory device as recited inclaim 82, wherein the memory operation is a cell read operation.
 89. Amemory device as recited in claim 82, wherein the memory operation is acell write operation.
 90. A memory device as recited in claim 82,wherein the memory operation is a cell sense operation.
 91. A memorydevice as recited in claim 82, wherein the memory operation is a cellprecharge operation.
 92. A memory device as recited in claim 82, whereinthe one or more delay elements are configurable, after devicemanufacture, to delay the received input load signal by different times.93. A memory device as recited in claim 82, wherein the one or morecalibration signals are received on a conductor that also carries theinput load signal.
 94. A memory device as recited in claim 82, whereinthe one or more calibration signals are encoded on an address bus.
 95. Amemory device as recited in claim 82, wherein the one or morecalibration signals are encoded on a command bus.
 96. A memory device asrecited in claim 82, wherein the one or more calibration signals areencoded on a data bus.